Comprehensive Physics-Based Model for Millimeterwave Transistors

Nouri, Soheil; El-Ghazaly, S.M.

doi:10.1109/rws50353.2021.9360354

Cited by 7 publications

(8 citation statements)

References 9 publications

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“…The results presented in Fig. 4(b) and 4(c) demonstrate the enhancement of the new modeling scheme compared to that used in [14]. This enhancement is primarily due to the proposed parameter extraction method presented in Sec.…”

Section: A Power Sweep Analysismentioning

confidence: 74%

“…And if the effect of skin depth in high frequency is not taken into account, the values obtained for resistance would not be sufficiently accurate. Table I compares the value of per-unit-width resistance obtained in this work with those used in [14]. Modified Wheeler's method gives a better estimation for the resistance since the thickness of the device is equal to 1.15δs at 94 GHz.…”

Section: A Power Sweep Analysismentioning

confidence: 92%

“…The proposed modeling scheme applied in this research work was validated in [14]. This was achieved by applying the proposed WET model to the fabricated GaN-HEMT device in [20].…”

Section: A Power Sweep Analysismentioning

confidence: 99%

“…Modified Wheeler's method gives a better estimation for the resistance since the thickness of the device is equal to 1.15δs at 94 GHz. In [14], the current distribution was approximated to be uniform since the skin depth was believed to be roughly equal to the thickness of the conductors. This underestimates the resistance value which translates into a higher gain in [14] compared to the generated results in this work.…”

Section: A Power Sweep Analysismentioning

confidence: 99%

“…This model needs to be modified in order to perform the large-signal analysis and take the effect of non-linearity into account [13]. In [14] a comprehensive physics-based model is proposed. In this paper, details of the modeling approach are presented.…”

Section: Introductionmentioning

confidence: 99%

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Global Modeling of Millimeter-Wave Transistors: Analysis of Electromagnetic-Wave Propagation Effects

Nouri

El-Ghazaly

2022

IEEE Access

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In this study, the transmission line concept and the electron transport theory are consolidated in a global modeling approach, the wave-electron-transport (WET) model, to account for the physical phenomena in millimeter-wave devices. No equivalent circuit model is required to represent the innate properties of the device. Hence, the model is reliable for both small-and large-signal analyses. The electrodes of a transistor act as coupled multi-conductor transmission lines at millimeter-wave bands. The WET model consists of a device solver to obtain solutions for carrier-transport equations of the intrinsic device, and an electromagnetic solver (EM solver) to provide solutions for the governing transmission lines equations. As it is crucial to transfer data between these two solvers, an interface scheme is also developed and included in the WET model. The extrinsic parameters of the device are extracted using a novel systematic technique merely based on the physical structure of the transistor. In this paper, the modeling procedure is applied to a fabricated GaN-HEMT device. Power sweep analysis has verified the accuracy of the proposed model under both linear and non-linear operations. Non-uniform voltage distribution caused by traveling waves over the electrodes is elaborately discussed to demonstrate the necessity of incorporating distributed effects.INDEX TERMS Electromagnetic-wave propagations, millimeter-wave transistor, non-linear operations, transmission line concept, wave-electron-transport model.

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Section: A Power Sweep Analysismentioning

confidence: 74%

Section: A Power Sweep Analysismentioning

confidence: 92%

“…The proposed modeling scheme applied in this research work was validated in [14]. This was achieved by applying the proposed WET model to the fabricated GaN-HEMT device in [20].…”

Section: A Power Sweep Analysismentioning

confidence: 99%

Section: A Power Sweep Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Global Modeling of Millimeter-Wave Transistors: Analysis of Electromagnetic-Wave Propagation Effects

Nouri

El-Ghazaly

2022

IEEE Access

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Effects of Electrodes Layout on Performance of Millimeter-Wave Transistors

Nouri,

El-Ghazaly

2023

IEEE Access

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This work presents a systematic parameter extraction methodology for modeling of millimeterwave transistors. The physics-based parameter extraction approach in this study is included in the waveelectron-transport model to improve the accuracy of the simulation results. The effects of extrinsic parameters on the performance of the device are also analyzed in detail. Skin effects and sharp metallization edge effects as the two physical phenomena that impact the current distribution and the resistance of millimeter-wave transistors are studied thoroughly. Two common electrode layout variations, the T configuration and the fork configuration, are compared. The comparison mainly targeted their performance on upper millimeter bands where physical phenomena like wave-propagation effects are dominant. The output power and the power gain of the transistor for a GaN-HEMT device are simulated and compared with measurements. Results illustrate the influence of parameters and electrode layout design on the accuracy of the modeling approach.INDEX TERMS Parameter extraction methodology, millimeter-wave transistors, electrode layout effects, edge effects, skin effects, physics-based modeling approaches.

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