Comprehensive Research on the Response of MIS Sensors of Pd‒SiO2‒Si and Pd‒Ta2O5‒SiO2‒Si Structures to Various Gases in Air

Bolodurin, B. A.; Korchak, V. Yu.; Литвинов, А. В.; Mikhailov, A. A.; Nozdrya, D. A.; Pomazan, Yu. V.; Filipchuk, D. V.; Etrekova, Maya

doi:10.1134/s1070363218120435

Cited by 7 publications

(2 citation statements)

References 4 publications

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“…Our technology-distinctive feature to produce MOSFEC sensors with the Pd/Ta 2 O 5 /SiO 2 /Si type structure is high gas sensitivity in the operating temperature range from 50 °C to 150 °C with a limit of detection (LOD) for Hydrogen at the level of 150 ppb [ 16 , 17 ]. Such a sensitivity, in our opinion, is largely due to a combination of the following technological factors: the use of Pulsed Laser Deposition (PLD) for the thin films’ fabrication; the capacitor type of the MOS structures; and a porous electrode with a diameter of 2 to 3 mm made of catalytically active Palladium.…”

Section: Introductionmentioning

confidence: 99%

MOSFE-Capacitor Silicon Carbide-Based Hydrogen Gas Sensors

Литвинов

Etrekova

Podlepetsky

et al. 2023

Sensors

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The features of the wide band gap SiC semiconductor use in the capacitive MOSFE sensors’ structure in terms of the hydrogen gas sensitivity effect, the response speed, and the measuring signals’ optimal parameters are studied. Sensors in a high-temperature ceramic housing with the Me/Ta2O5/SiCn+/4H-SiC structures and two types of gas-sensitive electrodes were made: Palladium and Platinum. The effectiveness of using Platinum as an alternative to Palladium in the MOSFE-Capacitor (MOSFEC) gas sensors’ high-temperature design is evaluated. It is shown that, compared with Silicon, the use of Silicon Carbide increases the response rate, while maintaining the sensors’ high hydrogen sensitivity. The operating temperature and test signal frequency influence for measuring the sensor’s capacitance on the sensitivity to H2 have been studied.

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Section: Introductionmentioning

confidence: 99%

MOSFE-Capacitor Silicon Carbide-Based Hydrogen Gas Sensors

Литвинов

Etrekova

Podlepetsky

et al. 2023

Sensors

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“…In this paper, we will talk about a highly gas-sensitive (at the ppb-level) capacitive sensor based on a MIS structure with a palladium electrode made using pulsed laser spraying technology [32]. The first references to gas sensors with a similar design and operating principle are found in [33].…”

Section: Introductionmentioning

confidence: 99%

Prototype of Nitro Compound Vapor and Trace Detector Based on a Capacitive MIS Sensor

Samotaev

Литвинов

Etrekova

et al. 2020

Sensors

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A prototype of a nitro compound vapor and trace detector, which uses the pyrolysis method and a capacitive gas sensor based on the metal–insulator–semiconductor (MIS) structure type Pd–SiO2–Si, was developed and manufactured. It was experimentally established that the detection limit of trinitrotoluene trace for the detector prototype is 1 × 10−9 g, which corresponds to concentration from 10−11 g/cm3 to 10−12 g/cm3. The prototype had a response time of no more than 30 s. The possibility of further improving the characteristics of the prototype detector by reducing the overall dimensions and increasing the sensitivity of the MIS sensors is shown.

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