2014
DOI: 10.7567/jjap.53.096502
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Comprehensive study of hole injection in non-overlapped implantation n-type MOSFETs

Abstract: The promising use of non-overlapped implantation (NOI) n-type MOSFETs as nonvolatile memory (NVM) devices has received considerable interest owing to their simple device structure and compatibility with logic CMOS processing. In NOI n-type MOSFETs, the charge distribution by channel hot electron injection (CHEI) programming markedly differs from that in other charge trapping devices in terms of electron injection distribution. In this study, hot hole injection (HHI) in NOI NVM devices is investigated using Tec… Show more

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