Comprehensive study on dynamic bias temperature instability of p-channel polycrystalline silicon thin-film transistors

Huang, Chih‐Fen; Yang, Yihan; Peng, C.-Y.; Sun, Haiyan; C, Liu; Chao, Chih-Wei; Lin, Kun Chih

doi:10.1109/isdrs.2007.4422557

Cited by 240 publications

(321 citation statements)

References 2 publications

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“…Comparing our experimental results with previous works, we find that the values of E turn-on of ta-C films reported in this article are lower than the values obtained by Park et al, 55 Chuang et al, 56 Missert et al 57 and significantly lower than those of undoped a-C:H film. 58 These values are larger to those reported for similar material by Satyanaryana et al, 36 or for nitrogen-containing carbon films reported by Amaratunga and Silva, 48 Weber et al, 49 and Panwar et al 37 grown under different process conditions.…”

Section: Comparison Of Results Obtained With Those Existing In Litsupporting

confidence: 65%

Effect of high substrate bias and hydrogen and nitrogen incorporation on density of states and field-emission threshold in tetrahedral amorphous carbon films

Panwar

Khan

Satyanarayana³

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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This article reports the influence of substrate bias during growth and of hydrogen and nitrogen incorporation on density of states ͓N ͑E F ͔͒ and field-emission threshold ͑E turn-on ͒ in tetrahedral amorphous carbon ͑ta-C͒ films, deposited using an S-bend filtered cathodic vacuum arc process. The variation in negative substrate bias from Ϫ20 to Ϫ200 V was found to initially lead to a small decrease in N ͑E F ͒ and E turn-on , and a small increase in the emission current density ͑J͒ at 12.5 V / m in the case of as-grown ta-C films; beyond Ϫ200 V substrate bias there is a reversal in the trend. The values of N ͑E F ͒ = 1.3ϫ 10 17 cm −3 eV −1 , E turn-on = 8.3 V / m, and J = 6.19 mA/ cm 2 were observed at Ϫ200 V substrate bias. However at Ϫ300 V the properties were not very different from those at Ϫ200 V substrate bias and so with a view to use the higher energy, hydrogen and nitrogen incorporation studies were carried out in this condition. It was observed that there was further enhancement in properties with hydrogen and nitrogen incorporation. The best properties measured with in the range of hydrogen and nitrogen incorporation in the present study were N ͑E F ͒ = 8.0ϫ 10 16 cm −3 eV −1 , E turn-on = 7.6 V / m, and J = 23.7 mA/ cm 2 , respectively.

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Section: Comparison Of Results Obtained With Those Existing In Litsupporting

confidence: 65%

Effect of high substrate bias and hydrogen and nitrogen incorporation on density of states and field-emission threshold in tetrahedral amorphous carbon films

Panwar

Khan

Satyanarayana³

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…This underlies the specificity of our method at variance with HPLC-fluorescence methods requiring oxidative derivatizations. As discussed by Chuang et al [15] EDTA and metabisulphite contaminating heparin from the anticoagulants interfere in various ways.…”

Section: Sample Materials and Stabilitymentioning

confidence: 99%

Plasma citrulline measurement using UPLC tandem mass-spectrometry to determine small intestinal enterocyte pathology

Demacker

Beijers

Daal

et al. 2009

Journal of Chromatography B

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“…The field emission behavior was characterized in a parallel plate diode configuration in which the CNT cathode was connected to ground. 15 Figure 3͑a͒ shows the Raman spectra of these CNT films. Two regimes of voltage fields, high and low, were applied to characterize the emission properties: ͑i͒ the anode current was measured as a function of anode voltage with floating gate, and ͑ii͒ the gate current was measured as a function of gate voltage with floating anode.…”

Section: Methodsmentioning

confidence: 99%

Fabrication and field emission characteristics of high density carbon nanotube microarrays

Chuang

Huang

Lee

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Study of high-brightness flat-panel lighting source using carbon-nanotube cathodeHigh density carbon nanotube field emitter arrays ͑CNT-FEAs͒ with various multilayer cathode structures have been fabricated on Si utilizing conventional integrated circuit technology and microwave-heated chemical vapor deposition process. The CNT-FEAs were configured as triode emitters with 1-µm thermal SiO 2 as the insulator and 400-nm Cr as the gate, and compared per the resulting morphologies, Raman spectra, and field emission characteristics. It was found that the Ni/ Cr/ Si cathode structure is the best fit for selective growth of CNTs in gate holes. In particular, a CNT-FEA fabricated on Ni͑60 nm͒ /Cr͑80 nm͒ / Si cathode structure has yielded excellent emission characteristics, with low turn-on and threshold fields, being, respectively, at 0.45 and 3.7 V / m. This triode CNT device also exhibited a uniform image of high brightness ͑ϳ1800 cd/ m 2 ͒ on a green-phosphor coated idium-tin-oxide glass and a relatively stable emission current, being tested at a constant anode voltage of 1000 and 900 V, respectively.

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Comprehensive study on dynamic bias temperature instability of p-channel polycrystalline silicon thin-film transistors

Cited by 240 publications

References 2 publications

Effect of high substrate bias and hydrogen and nitrogen incorporation on density of states and field-emission threshold in tetrahedral amorphous carbon films

Effect of high substrate bias and hydrogen and nitrogen incorporation on density of states and field-emission threshold in tetrahedral amorphous carbon films

Plasma citrulline measurement using UPLC tandem mass-spectrometry to determine small intestinal enterocyte pathology

Fabrication and field emission characteristics of high density carbon nanotube microarrays

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