Comprehensive understanding on germanium-doping effects on oxygen precipitation in Czochralski silicon wafers with a prior rapid thermal anneal

Wu, Lan; Zhao, Tong; Wu, Defan; Yang, Deren; Ma, Xiangyang

doi:10.1007/s00339-021-05023-5

Cited by 2 publications

(1 citation statement)

References 35 publications

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“…To figure out the effect of Ti-codoping on the symmetry of the “ErO 6 ” cluster in the ZnO:Er film, one ZnO supercell containing an “ErO 6 ” cluster and the other containing an “ErO 6 ” cluster with an adjacent Ti atom were constructed for DFT calculations. The procedures and conditions for DFT calculations can be referred to our previous reports. , …”

Section: Theoretical Calculationsmentioning

confidence: 99%

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped ZnO Films: Strong Enhancement Effect of Titanium Codoping

Xia

Chen

Zhao

et al. 2022

ACS Appl. Mater. Interfaces

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We report on the visible and near-infrared electroluminescence (EL) from the light-emitting device (LED) based on the erbium (Er)-doped ZnO (ZnO:Er)/SiO2/n+-Si heterostructure, wherein an ∼10 nm thick SiO2 intermediate layer serves as the energy plateau for producing hot electrons, which come from n+-Si via the trap-assisted tunneling mechanism. These hot electrons excite the doped Er3+ ions by inelastic collision, enabling the Er-related EL from the aforementioned LED. More importantly, by means of codoping the appropriate content of titanium (Ti) into the ZnO:Er film, the aforementioned Er-related emissions can be significantly enhanced. The density functional theory calculations indicate that the Ti-codoping improves rather than degrades the symmetry of the crystal field around the optically active Er3+ ions, hence not increasing the intra-4f transition probabilities of Er3+ ions. However, it is found that Ti-codoping nearly eliminates the segregation of Er3+ ions near the ZnO/SiO2 interface. Moreover, Ti-codoping is derived to result in a number of Zn vacancies, which provide the sites for incorporating Er3+ ions in the ZnO matrix. For the above two reasons, the Ti-codoping promotes the incorporation of optically active Er3+ ions into the ZnO matrix, thus enhancing the EL from the aforementioned LED.

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Section: Theoretical Calculationsmentioning

confidence: 99%

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped ZnO Films: Strong Enhancement Effect of Titanium Codoping

Xia

Chen

Zhao

et al. 2022

ACS Appl. Mater. Interfaces

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Effect of Germanium Codoping on the Grown‐In Oxide Precipitates in Nitrogen‐Doped Czochralski Silicon

Zhao

et al. 2022

Physica Status Solidi (a)

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The effects of germanium (Ge)‐codoping at 1018, 1019, or 1020 cm−3 level on the grown‐in oxide precipitates in 1014 cm−3 level nitrogen (N)‐doped Czochralski (NCZ) silicon have been investigated. It is found that Ge‐codoping enhances the formation of relatively larger grown‐in oxide precipitates. However, such enhancement effect weakens with the increasing Ge‐codoping concentration. On this basis, the effect of 1018 cm−3 level Ge‐codoping on the near‐surface denuded zone (DZ) and bulk microdefects (BMDs) associated with oxygen precipitation in NCZ silicon subjected to an anneal at 1100 °C for 4 h (1100 °C/4 h) has been paid close attention. Moreover, the sustainability of the DZ in the 1100 °C/4 h ‐annealed NCZ silicon subjected to a “copper decoration” or a rigorous oxygen precipitation anneal featuring a prolonged nucleation anneal has been addressed. Thus, it is technologically significant to learn that for the 1100 °C/4 h ‐annealed NCZ silicon, the 1018 cm−3 level Ge‐codoping can remarkably increase the BMD density to better satisfy the requirement of internal gettering (IG) and also ensure the existence of a well‐defined DZ. Finally, the mechanism underlying the effect of Ge‐codoping on the formation of grown‐in oxide precipitates in NCZ silicon has been tentatively elucidated.

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Comprehensive understanding on germanium-doping effects on oxygen precipitation in Czochralski silicon wafers with a prior rapid thermal anneal

Cited by 2 publications

References 35 publications

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped ZnO Films: Strong Enhancement Effect of Titanium Codoping

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped ZnO Films: Strong Enhancement Effect of Titanium Codoping

Effect of Germanium Codoping on the Grown‐In Oxide Precipitates in Nitrogen‐Doped Czochralski Silicon

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