Comprehensively analysis of hot electron transport in as-grown and thermally annealed n-type modulation-doped Al0.15Ga0.85As/GaAs0.96Bi0.4 quantum well structure

Donmez, Omer; Aydın, Mustafa; Mutlu, Selman; Puustinen, Janne; Hilska, Joonas; Guina, Mircea; Erol, Ayşe

doi:10.1016/j.mssp.2022.107227

Cited by 7 publications

(2 citation statements)

References 48 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…According to the following equations, the refractive index of both SnNc/Glass and SnNc/p-Si can be estimated [48,49]: Figure 4 shows the temperature-dependent I-V characteristic of the SnNc/p-Si device under dark conditions. The maximum value of the current value in I-V measurement is kept lower to hinder the heating of the free carrier and photo-generated carrier during the measurement [50][51][52]. A depletion region is formed at the SnNc/p-Si interface, as concluded from the rectification behavior in I-V characteristics curves.…”

Section: Resultsmentioning

confidence: 99%

Spectroscopic and electronic investigations on tin(II) 2,3-naphthalocyanine/p-Si heterojunction for optoelectronic applications

Hassanien,

Darwish,

Kamal

2024

Phys. Scr.

View full text Add to dashboard Cite

The spectroscopic and electronic properties of small-molecular organic semiconductors in thin films are a significant aspect that controls the performance of their optical/optoelectronic devices. A heterojunction of thermal vacuum deposited film of tin(II)2,3-naphthalocyanine (SnNC) dye onto a p-type Si wafer (SnNC/p-Si) was fabricated. The morphology of SnNC thin film onto Si wafer was explored using the Field Emission Scanning Electron Microscope (FE-SEM). The specular reflectance and the fluorescent properties of SnNC thin film onto Si wafer were investigated. The PL emission spectra of SnNC/p-Si emission bands are related to the B and Q absorption bands for SnNC. The spectral behavior of the refractive index and the specific polarizability for both SnNC/Glass and SnNC/p-Si were extracted. Under varying temperatures (298–378 K), the electronic properties of the SnNC/p-Si heterojunction were analyzed in dark conditions. The diode parameters of SnNC/p-Si heterojunctions were extracted from the current-voltage (I-V) procedure, which exhibited temperature-dependent behavior. According to the Cheung-Cheung and Norde procedure, the essential electrical diode parameters of the SnNC/p-Si device such as the ideality factor, the series resistance, and barrier height were estimated. The photoconductivity parameters such as the photocurrent, the sensitivity, and the responsivity of the SnNC/p-Si devices were estimated. We believe that these findings can be useful and utilized in optoelectronic and organic electronic applications.

show abstract

Section: Resultsmentioning

confidence: 99%

Spectroscopic and electronic investigations on tin(II) 2,3-naphthalocyanine/p-Si heterojunction for optoelectronic applications

Hassanien,

Darwish,

Kamal

2024

Phys. Scr.

View full text Add to dashboard Cite

show abstract

“…

the high tunability of the bandgap modifying valence band (VB) structure without compromising the electronic charge transport in the conduction band (CB) [8][9][10][11][12][13]. The strong Bi-dependence of all VBs (heavy and light hole and spinorbit bands) has revealed that the potential of Bi-containing alloys not only suppress Auger recombination in semiconductor lasers but also to be used in NIR and MIR applications [14].

…”

mentioning

confidence: 99%

Characterization of induced quasi-two-dimensional transport in n-type InxGa1−xAs1 − yBiy bulk layer

Aydin,

Yilmaz,

Bork

et al. 2024

Appl. Phys. A

Self Cite

View full text Add to dashboard Cite

The temperature-dependent transport properties of n-type InGaAsBi epitaxial alloys with various doping densities are investigated by conducting magnetoresistance (MR) and Hall Effect (HE) measurements. The electronic band structure of the alloys and free electron distribution were calculated using Finite Element Method (FEM). Analysis of the oscillations in the transverse (Hall) resistivity shows that quasi-two-dimensional electron gas (Q-2D) in the bulk InGaAsBi epitaxial layer (three-dimensional, 3D) forms at the sample surface under magnetic field even though there is no formation of the spacial two-dimensional electron gas (2DEG) at the interface between InGaAs and InP:Fe interlayer. The formation of Q-2D in the 3D epitaxial layer was verified by temperature and magnetic field dependence of the resistivity and carrier concentration. Analysis of Shubnikov-de Haas (SdH) oscillations in longitudinal (sample) resistivity reveals that the electron effective mass in InGaAsBi alloys are not affect by Bi incorporation into host InGaAs alloys, which verifies the validity of the Valence Band Anti-Crossing (VBAC) model. The Hall mobility of the nondegenerate samples shows the conventional 3D characteristics while that of the samples is independence of temperature for degenerated samples. The scattering mechanism of the electrons at low temperature is in long-range interaction regime. In addition, the effects of electron density on the transport parameters such as the effective mass, and Fermi level are elucidated considering bandgap nonparabolicity and VBAC interaction in InGaAsBi alloys.

show abstract

Magnetothermal properties of two-dimensional electron gas in matched AlGaAs/GaABiN structure

Mbarki,

Ajnef,

Rebey

2024

Appl. Phys. A

View full text Add to dashboard Cite

Comprehensively analysis of hot electron transport in as-grown and thermally annealed n-type modulation-doped Al0.15Ga0.85As/GaAs0.96Bi0.4 quantum well structure

Cited by 7 publications

References 48 publications

Spectroscopic and electronic investigations on tin(II) 2,3-naphthalocyanine/p-Si heterojunction for optoelectronic applications

Spectroscopic and electronic investigations on tin(II) 2,3-naphthalocyanine/p-Si heterojunction for optoelectronic applications

Characterization of induced quasi-two-dimensional transport in n-type InxGa1−xAs1 − yBiy bulk layer

Magnetothermal properties of two-dimensional electron gas in matched AlGaAs/GaABiN structure

Contact Info

Product

Resources

About