Compressive Stressed P-Channel Polycrystalline-Silicon Thin-Film Transistors for High Field-Effect Mobility

Abstract

A compressively stressed polycrystalline-silicon (poly-Si) TFT was successfully demonstrated on a tensile stressed glass substrate. The layer of a-Si:H/bare glass was annealed for 45 hrs with a sharp annealing and slow cooled condition in order to form compressive strain on the a-Si:H film. Then, the a-Si:H was crystallized by NiSi 2 seed-induced lateral crystallization having (110) preferred texture and the top-gated TFT was fabricated. The electrical properties were excellent comparing with the strain-free poly-Si TFT and especially the field-effect mobility increased 9.3 times higher.Index Terms-Strain silicon, polycrystalline-silicon thin-film transistor (poly-Si TFT), compressive stress.