Compton profiles of p‐Si and n‐Si in an external electric field

Abstract

The Compton profiles of p‐Si and n‐Si have been measured in an external electric field with 59.54 keV gamma radiation from an Am‐241 source. The external electric field of intensities +167 kV/m and –167 kV/m were used to change the surface charge density of the samples. Comparison of the profiles of p‐Si and n‐Si in the same magnitude but opposite direction of the electric field gives information about the Compton scattering of gamma rays from holes. Furthermore, the Compton profile experiments in an external electric field can be used to identify the type of semiconductor. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)