Computation of thermal properties of a copper–copper nano interface structure using a MD–ISE–FE method

Yang, Ping; Fan, Haibiao; Zhang, Liqiang; Tang, Yunqing

doi:10.1016/j.ijheatmasstransfer.2014.06.043

Cited by 3 publications

(2 citation statements)

References 31 publications

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“…With the development of highly integrated electronic devices, the size of electronic devices is more close to nanoscale [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]. The thermal conductivity of GNRs can reach up to 5000 W/mK at room temperature, and the good thermal conductivity and electrical properties make it an ideal material for the next generation of integrated circuits [1].…”

Section: Introductionmentioning

confidence: 99%

Heat transfer regulation of hole defect graphene by nitrogen doping

et al. 2015

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Using classical molecular dynamics simulation, we investigate the thermal transport properties of hole defect graphene nanoribbons (HD-GNRs) possing various doping concentration of nitrogen atoms. By changing the concentration of nitrogen atoms, we try to find an effective method to adjust the heat transfer of HD-GNRs. The results show that the existence of hole defect in graphene destroys the structural integrity of the GNRs, which causes great decrease in thermal conductivity. We detect that nitrogen doping is a very sensitive mode for hole defect graphene nanoribbons. The thermal conductivity of HD-GNRs can be greatly improved by decreasing the N doping concentration from 7 to 0.87 %.

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Section: Introductionmentioning

confidence: 99%

Heat transfer regulation of hole defect graphene by nitrogen doping

et al. 2015

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“…This method has many merits, but it proved to be inefficient and imprecise. Based on the MD/FE coupled multiscale method, a more accurate MD/ISE/FE method was proposed by Yang et al by introducing the interface stress element (ISE) into the MD/FE multiscale method to improve the calculation accuracy. Two coupling regions are present between the two different models, which are known as the handshake regions.…”

Section: Thermal Resistance At the Interface Between Contacting Matermentioning

confidence: 99%

A Theoretical Review on Interfacial Thermal Transport at the Nanoscale

Zhang

Yuan

Xiong

et al. 2017

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With the development of energy science and electronic technology, interfacial thermal transport has become a key issue for nanoelectronics, nanocomposites, energy transmission, and conservation, etc. The application of thermal interfacial materials and other physical methods can reliably improve the contact between joined surfaces and enhance interfacial thermal transport at the macroscale. With the growing importance of thermal management in micro/nanoscale devices, controlling and tuning the interfacial thermal resistance (ITR) at the nanoscale is an urgent task. This Review examines nanoscale interfacial thermal transport mainly from a theoretical perspective. Traditional theoretical models, multiscale models, and atomistic methodologies for predicting ITR are introduced. Based on the analysis and summary of the factors that influence ITR, new methods to control and reduce ITR at the nanoscale are described in detail. Furthermore, the challenges facing interfacial thermal management and the further progress required in this field are discussed.

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