Moderate
band gap and high stabilities are key properties
in (opto)electronic
devices application. Based on first-principles calculations, we predicted
an ultrathin two-dimensional (2D) semiconductor, namely, a ScSI nanosheet,
with tunable electronic properties and high stabilities. The ScSI
monolayer is an indirect semiconductor with a band gap of 2.59 eV,
and significantly, this monolayer can shift from an indirect to direct
band gap under small strains. Moreover, the cleavage energy of the
ScSI monolayer is lower than that of graphene, and this monolayer
possesses high dynamical, thermal, and mechanical stabilities, suggesting
the possibility of mechanical exfoliation experimentally. Interestingly,
due to the quantum confinement effect, the band gaps of the ScSI nanosheets
exhibit a layer-dependent exponential decay relationship with an increasing
number of layers. The exceptional properties render ScSI nanosheets
a promising candidate for flexible applications in optoelectronic
devices especially in photoelectric sensors.