Computational Investigation of Nanoscale Semiconductor Devices and Optoelectronic Devices From the Electromagnetics and Quantum Perspectives by the Finite Difference Time Domain Method (Invited Review)

Duan, Huali; Fang, Wenxiao; Wang, Yin; Li, Er‐Ping; Chen, and Wenchao

doi:10.2528/pier20122201

Cited by 8 publications

(2 citation statements)

References 64 publications

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“…A complete study on the stability analysis of this method may be found in [68,70]. Physical systems having potentials of any arbitrary configuration can be simulated using the GFDTD-Q method [73][74][75][76][77][78][79][80][81][82]. Moreover, this method has already been applied in previous studies to simulate matter wave diffraction phenomena [63,66].…”

Section: Methodsmentioning

confidence: 99%

Near-field diffraction of protons by a nanostructured metallic grating under external electric field: asymmetry and sidebands in Talbot self-imaging

Barman,

Bhattacharjee

2023

New J. Phys.

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Self-imaging in near-field diffraction is a practical application of coherent manipulation of matter waves in Talbot interferometry. In this work, near-field diffraction of protons by a nanostructured metallic grating under the influence of (a) uniform, (b) spatially modulated, and (c) temporally modulated electric fields are investigated. Time-domain simulations of two-dimensional Gaussian wave packets for protons are performed by solving the time-dependent Schrödinger's equation using the generalized finite difference time domain (GFDTD-Q) method for quantum systems. Effects of strength (E0 ) and orientation (θ) of the uniform electric field on the diffraction properties, such as fringe pattern, intensity of the peaks, fringe shift, and visibility, are investigated. The results show that the Talbot fringes shift significantly in the transverse direction even for a small change in the applied electric field (ΔE0=0.1 V/m) and its orientation (Δθ=0.1o). Moreover, electric field-dependent fringe visibility is observed, which can be tuned by E0 and θ. The potential barriers arising from a spatially modulated electric field are observed to cause significant distortions in the Talbot patterns when the modulation length (λ') is equal to the de Broglie wavelength (λdB ). Sidebands are observed in the Talbot pattern due to the efficient transfer of energy from the oscillating field to the wave packet when the frequency of oscillation (ω) is of the order of ω0 (=2π/T0 ), where T0 is the interaction time. This study will be helpful in uniform electric field-controlled precision metrology, developing a highly sensitive electric field sensor based on Talbot interference, and precisely aligning the matter wave optical setup. Furthermore, the sidebands in the Talbot fringe can be used as a precise tool as momentum splitter in matter wave interferometry.

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Section: Methodsmentioning

confidence: 99%

Near-field diffraction of protons by a nanostructured metallic grating under external electric field: asymmetry and sidebands in Talbot self-imaging

Barman,

Bhattacharjee

2023

New J. Phys.

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“…In this section, the RRAM mechanisms of different GE-RRAMs are firstly introduced. Then, multiphysic and compact models of GE-RRAM are further described [32,33,48,49].…”

Section: Graphene Rrammentioning

confidence: 99%

Mechanisms and Modeling of 2d-Materials-Based Resistive Random Access Memory Devices (Invited Review)

Xie¹,

Wang²,

Yang³

et al. 2021

PIER

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Resistive random access memory (RRAM) devices are promising candidates for next generation high capacity data storage due to their superior properties such as cost-effective fabrication, high operating speed, low power consumption, and long data retention. Particularly, the two dimensional (2D)-materials-based RRAM has attracted researchers' attention because of its unique physical and chemical properties without the constraint of lattice matching. In this review, the switching mechanisms and modeling of RRAM devices based on the 2D materials such as hexagonal-boron nitride (h-BN) and graphene are discussed. Firstly, the monolayer and multilayer h-BN RRAMs are introduced, and their mechanisms and compact model are further described. Then, the mechanisms of graphene electrodebased RRAM (GE-RRAM) for different applications are also introduced and compared. Furthermore, the electrical conductivity, multi-physic and compact models of GE-RRAM are introduced. This review paper provides the guidance for the design and optimization of the 2D-materials-based RRAM in the next generation memories.

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Artificial neural network models for metal-ferroelectric-insulator-semiconductor ferroelectric tunnel junction memristor

Li,

Duan

et al. 2024

Microelectronics Journal

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Computational Investigation of Nanoscale Semiconductor Devices and Optoelectronic Devices From the Electromagnetics and Quantum Perspectives by the Finite Difference Time Domain Method (Invited Review)

Cited by 8 publications

References 64 publications

Near-field diffraction of protons by a nanostructured metallic grating under external electric field: asymmetry and sidebands in Talbot self-imaging

Near-field diffraction of protons by a nanostructured metallic grating under external electric field: asymmetry and sidebands in Talbot self-imaging

Mechanisms and Modeling of 2d-Materials-Based Resistive Random Access Memory Devices (Invited Review)

Artificial neural network models for metal-ferroelectric-insulator-semiconductor ferroelectric tunnel junction memristor

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