Computational Investigation on H&lt;SUB&gt;2&lt;/SUB&gt;S Adsorption on the CNT Channel of Conductometric Gas Sensor

Istadeh, Kiarash Hosseini; Kalantarinejad, Reza; Aghaei, Maryam; Yazdi, Mohammad Reza Soleymani

doi:10.1166/jctn.2013.3270

Cited by 7 publications

(3 citation statements)

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“…Recently, with a rise in the popularity of renewable energy for transportation and electronics, studies about carbon nanotube usage for improving the durability, lifespan, and capacity of batteries have started to receive considerable attention [17][18][19][20][21][22][23][24][25][26][27][28]. Further, in the last decade, studies about the usage of CNT in one of the most e ective usage areas, gas sensors, have soared [29][30][31][32][33][34][35][36][37][38][39][40][41][42][43][44][45]. The discovery of CNTs may be a revolutionary point for many application areas such as processor technology, biotechnology, gas/chemical sensors, aerospace technology, etc.…”

Section: Introductionmentioning

confidence: 99%

Finite Element Model and Size Dependent Stability Analysis of Boron Nitride and Silicon Carbide Nanowires/Nanotubes

2019

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In the present paper, stability analysis of boron nitride and silicon carbide nanotubes/nanowires is carried out using di erent size-e ective theories, nite element method, and computer software. Size-e ective theories used in this paper include Modi ed Couple Stress Theory (MCST), Modi ed Strain Gradient Theory (MSGT), Nonlocal Elasticity Theory (NET), Surface Elasticity Theory (SET), and Nonlocal Surface Elasticity Theory (NSET). As for the computer software, ANSYS and COMSOL multiphysics are used. Comparative results of theories and software and literature are given in the result section. Comparative results are in good harmony. In conclusion, it is clearly seen that the nonlocal elasticity theory yields the lowest results for every modes and structures, while the modi ed strain gradient theory yields the highest results.

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Section: Introductionmentioning

confidence: 99%

Finite Element Model and Size Dependent Stability Analysis of Boron Nitride and Silicon Carbide Nanowires/Nanotubes

2019

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“…Unlike the traditional channel-sensitive FET gas sensor, an ultrathin gate dielectric layer in the carbon-based FET-type gas sensor is used to physically isolate the channel from the sensitive layer. Because the channel carbon tube is effectively passivated, some nonselective adsorption sites on the CNTs are effectively shielded and then improve the selectivity of the carbon-based FET-type gas sensor. − Most importantly, the synergistic sensitization effect of the gas-sensing gate material (Pd/Au) also played an important role in terms of enhancing the selectivity of the carbon-based FET-type gas sensor . In addition, the working temperature of the carbon-based FET-type gas sensor is also an important factor.…”

Section: Results and Discussionmentioning

confidence: 99%

Carbon Nanotube-Based Field-Effect Transistor-Type Sensor with a Sensing Gate for Ppb-Level Formaldehyde Detection

Liu

Cao

et al. 2021

ACS Appl. Mater. Interfaces

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The detection of harmful trace gases, such as formaldehyde (HCHO), is a technical challenge in the current gas sensor field. The weak electrical signal caused by trace amounts of gases is difficult to be detected and susceptible to other gases. Based on the amplification effect of a field-effect transistor (FET), a carbon-based FET-type gas sensor with a gas-sensing gate is proposed for HCHO detection at the ppb level. Semiconducting carbon nanotubes (s-CNTs) and a catalytic metal are chosen as channel and gate materials, respectively, for the FET-type gas sensor, which makes full use of the respective advantages of the channel transport layer and the sensitive gate layer. The asprepared carbon-based FET-type gas sensor exhibits a low detection limit toward HCHO up to 20 ppb under room temperature (RT), which can be improved to 10 ppb by a further heating strategy. It also exhibits a remarkable elevated recovery rate from 80 to 97% with almost no baseline drift (2%) compared to the RT condition, revealing excellent reproducibility, stability, and recovery. The role of sensitive function in the FET-type gas sensor is performed by means of an independent gas-sensing gate, that is, the independence of the sensitive gate and the electron transmission channel is the main reason for its high sensitivity detection. We hope our work can provide an instructive approach for designing high-performance formaldehyde sensor chips with on-chip integration potential.

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“…For instance in [18] the continuum model's accuracy is compared with atomistic simulation to compute the pull-in voltage of Nano-cantilever switches. Atomistic simulation is an applicable approach to studying nano system's properties [19]- [21]. Hoshyarmanesh et al applied molecular dynamics to investigate surface molecular interaction in micro-cantilever biosensors [22].…”

Section: Introductionmentioning

confidence: 99%

Molecular Dynamic Study of Pull-In Instability of Nano-Switches

Hoshyarmanesh¹,

Bahrami²

2014

ANP

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Capacitive nano-switches have been of great interest as replacements for conventional semiconductor switches. Accurate determination of the pull-in voltage is critical in the design process. In the present investigation, pull-in instability of nano-switches made of two parallel plates subjected to electrostatic force is studied. For this purpose, two parallel rectangular nanoplates with opposite charges are modeled based on molecular dynamics (MD) technique. Different initial gaps between nanoplates and its effect on pull-in phenomena are studied in addition to taking different values of geometrical and physical parameters into account to evaluate pull-in voltages. Here molecular dynamic simulations as an atomic interaction approach are employed for modeling of nano-switches in order to study pull-in instability considering atomic interaction and surface tension. Boundary conditions and also the van der Waals force are considered as important parameters to investigate their effects on pull-in voltage values.

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Computational Investigation on H<SUB>2</SUB>S Adsorption on the CNT Channel of Conductometric Gas Sensor

Cited by 7 publications

References 0 publications

Finite Element Model and Size Dependent Stability Analysis of Boron Nitride and Silicon Carbide Nanowires/Nanotubes

Finite Element Model and Size Dependent Stability Analysis of Boron Nitride and Silicon Carbide Nanowires/Nanotubes

Carbon Nanotube-Based Field-Effect Transistor-Type Sensor with a Sensing Gate for Ppb-Level Formaldehyde Detection

Molecular Dynamic Study of Pull-In Instability of Nano-Switches

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