2016 IEEE Energy Conversion Congress and Exposition (ECCE) 2016
DOI: 10.1109/ecce.2016.7854953
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Computational light junction temperature estimator for active thermal control

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Cited by 34 publications
(13 citation statements)
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“…The most significant techniques in this field are based on the evaluation of switching times or on the threshold voltage of the body diode [4] and [5]. Other techniques rely on a thermal-electrical model of the component [6]. Most of the TSEP techniques require complex calibration, and this makes their application to commercial converters impractical.…”
Section: Introductionmentioning
confidence: 99%
“…The most significant techniques in this field are based on the evaluation of switching times or on the threshold voltage of the body diode [4] and [5]. Other techniques rely on a thermal-electrical model of the component [6]. Most of the TSEP techniques require complex calibration, and this makes their application to commercial converters impractical.…”
Section: Introductionmentioning
confidence: 99%
“…Measuring parameters such as the collector emitter voltage of IGBTs or the ON state resistance of MOSFETs enables to identify the wear-out of the power semiconductors [10]. However, for effectively applying active thermal control, the knowledge of the junction temperature is required and can be accessed by measurement with thermosensitive electrical parameters, observers, or estimators [25].…”
Section: B Motivation For Power Routingmentioning
confidence: 99%
“…A cheaper solution can be realized by model based approaches only requiring low bandwidth case temperature measurement and the thermal characteristics provided in the datasheet [36]. The computation effort can be reduced by transforming the fourth order Foster model to second order [36]. A disadvantage of the model based approaches are model uncertainties and often the neglected thermal coupling between different power semiconductors.…”
Section: A Thermal Principles and Lifetime Expectationmentioning
confidence: 99%
“…Particularly, in modular power converters, there is the additional challenge of a high number of power semiconductors, resulting in many junction temperatures to be taken into account. A cheaper solution can be realized by model based approaches only requiring low bandwidth case temperature measurement and the thermal characteristics provided in the datasheet [36]. The computation effort can be reduced by transforming the fourth order Foster model to second order [36].…”
Section: A Thermal Principles and Lifetime Expectationmentioning
confidence: 99%