Computational modelling of cylindrical-ferroelectric-dual metal-nanowire field effect transistor (C-FE-DM-NW FET) using landau equation for gate leakage minimization

Kaul, Aapurva; Yadav, Snehlata; Rewari, Sonam; Nand, Deva

doi:10.1016/j.micrna.2024.207851

Micro and Nanostructures

2024

DOI: 10.1016/j.micrna.2024.207851

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Computational modelling of cylindrical-ferroelectric-dual metal-nanowire field effect transistor (C-FE-DM-NW FET) using landau equation for gate leakage minimization

Aapurva Kaul,

Snehlata Yadav,

Sonam Rewari

et al.

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2024

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Cited by 2 publications

References 27 publications

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DM-PA-CNTFET Biosensor for Breast Cancer Detection: Analytical Model

Sharma,

Yadav,

Rewari

et al. 2024

ECS J. Solid State Sci. Technol.

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In this paper, an analytical model for a novel design dielectric modulated plasma-assisted carbon nanotube field-effect transistor (DM-PA-CNTFET) biosensor is proposed for breast cancer detection. This work is based on a PA-CNTFET in which CNT is used as a channel of FET, and various other device engineering techniques such as dual metal gate-all-around structure and dielectric stack of SiO2 and HfO2 have been used. A comparative analysis of DS-GAAE-CNTFET was performed using a silicon gate all-around FET (Silicon-GAA-FET)-based biosensor. Early detection of breast cancer is made possible by immobilizing MDA-MB-231 and HS578t into the dual-sided nanocavity, which alters the electrical properties of the proposed CNTFET-based biosensor. The DS-GAAE-CNTFET sensor demonstrates a drain ON current sensitivity of 236.9 nA and a threshold voltage sensitivity of 285.58 mV for HS578t cancer cells. Malignant MDA-MB-231 breast cells exhibit a higher drain ON current sensitivity of 343.35 nA and a corresponding threshold voltage sensitivity of 293.23 mV. The exceptional sensitivity and structural resilience of the DS-GAAE-CNTFET biosensor establish it as a promising candidate for early breast cancer detection.

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DM-PA-CNTFET Biosensor for Breast Cancer Detection: Analytical Model

Sharma,

Yadav,

Rewari

et al. 2024

ECS J. Solid State Sci. Technol.

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Double Metal Gate Macaroni Nanowire FET (DMGM-NFET) for Improved Performance and Off-State Leakage Reduction

Kaul,

Rewari,

Nand

2024

ECS J. Solid State Sci. Technol.

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A pioneering strategy is introduced to enhance band-to-band tunnelling (BTBT) and diminish gate leakages within a double metal gate macaroni-nanowire field-effect transistor (DMGM-NFET). After fine-tuning the threshold voltage, performance is juxtaposed with that of the single metal gate macaroni nanowire FET (SMGM-NFET), DMG-NFET, and single metal gate nanowire FET (SMG-NFET). A hollow pillar is integrated into the architecture of both the SMGM-NFET and the DMGM-NFET along the channel center. Consequently, the DMGM-NFET exhibits a noteworthy reduction in gate-induced drain leakage current, reaching levels as low as 10−11 A, along with a subthreshold slope that surpasses the optimum value by 9.7 mV/decade. Qualitative analysis indicates that the DMGM-NFET achieves the highest ION/IOFF ratio, surpassing the SMG-NFET by 3109 times, the DMG-NFET by 233 times, and the SMGM-NFET by 2 times. When compared to the others, the DMGM-NFET excels in such metrics as quality factor, Av, VEA, fT, TGF, ION/IOFF ratio, Gd, ID-VG, and ID-VD. The significant improvements in these parameters are attributed to the integration of a dual metal gate for enhanced channel regulation and the incorporation of a vacuum filler at the channel’s center, which effectively confines hot electron injections and impedes electron propagation in the OFF-state. These advancements position the DMGM-NFET as an exceptional solution for BTBT applications and for mitigating leakage currents.

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Computational modelling of cylindrical-ferroelectric-dual metal-nanowire field effect transistor (C-FE-DM-NW FET) using landau equation for gate leakage minimization

Cited by 2 publications

References 27 publications

DM-PA-CNTFET Biosensor for Breast Cancer Detection: Analytical Model

DM-PA-CNTFET Biosensor for Breast Cancer Detection: Analytical Model

Double Metal Gate Macaroni Nanowire FET (DMGM-NFET) for Improved Performance and Off-State Leakage Reduction

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