Computational Single-Electronics

Wasshuber, Christoph

doi:10.1007/978-3-7091-6257-6

Cited by 201 publications

(134 citation statements)

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“…The linear slope is given by The calculation showed capacitance, C = 0.4297 x 10 -18 F or 0.4297 aF. As a result, the capacitance, C from the simulation result is 0.4297 aF at 300 K. Based on the previous experimental result done by Wasshuber, the capacitance, C is 3 aF at 300 K [22] . Another result done by Takahashi et.al.…”

Section: Resultsmentioning

confidence: 70%

Single-Electron Transistor (SET) Process and Device Simulation Using SYSNOPSYS TCAD Tools

Hashim¹,

Rasmi²

2006

American J. of Applied Sciences

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Simulation of semiconductor device fabrication and operation is important to the design and manufacture of integrated circuits because it provides insights into complex phenomena that cannot obtained through experimentation or simple analytic models. Process and device simulation is commonly using for the design of new very large scale integration (VLSI) devices and processes. Simulation programs serves as exploratory tools in order to gain better understanding of process and device physics. In this research, single-electron transistor (SET) is simulated using Synopsys TCAD simulation tools to improve device performance and reliability or to increase the yield. The Taurus Medici is utilized for SET device simulation and the SET process simulation is utilizing Taurus TSUPREM-4. In addition, the structure of SET device, the capacitance, power, resistance and charging energy of SET device were obtained from these simulations. Ultimately, the SET device is operated at room temperature operation (300K).

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Section: Resultsmentioning

confidence: 70%

Single-Electron Transistor (SET) Process and Device Simulation Using SYSNOPSYS TCAD Tools

Hashim¹,

Rasmi²

2006

American J. of Applied Sciences

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“…In the next step we use this result to calculate the capacitance of a spherical grain employing the source point collocation method [13].…”

Section: Modeling Approachmentioning

confidence: 99%

Dielectric sensing by charging energy modulation in a nano-granular metal

2014

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Several sensing concepts using nanostructures prepared by focused electron beam induced deposition have been developed over the last years. Following work on highly miniaturized Hall sensors for magnetic sensing with soft magnetic Co, strain and force sensing based on nano-granular platinum-carbon structures (Pt(C)) was introduced. Very recently the capability of nano-granular Pt(C) structures to detect the presence of adsorbate water layers by conductance modulations was demonstrated. For magnetic and strain sensing the underlying physical mechanisms of the sensing effect have been analyzed in detail and are now quite well understood. This is not the case for the adsorbate layer induced conductance modulation effect. Here we provide a theoretical framework that allows for a semi-quantitative understanding of the observed water-sensing effect. We show how the near-interface renormalization of the Coulomb charging energy in the nano-granular metal caused by the dielectric screening of the polarizable adsorbate layer leads to a conductance modulation. The model can account for the conductance modulation observed in the water adsorbate experiments and can also be applied to understand similar effects caused by nearinterface dielectric anomalies of ferroelectric thin films on top of nano-granular Pt(C). Our findings provide a pathway towards optimized nano-granular layer structures suitable for a wide range of dielectric or local potential sensing applications.

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“…Equations 3-10 were solved by time-dependent MC simulations [26] of a large ensemble of independent QD's. We obtained the probabilities of each many-particle partition as a function of time by averaging over the ensemble populations.…”

Section: General Remarks On the Model Parametrizationmentioning

confidence: 99%

Cooling of radiative quantum-dot excitons by terahertz radiation: A spin-resolved Monte Carlo carrier dynamics model

Boxberg¹,

Tulkki²,

Yusa

et al. 2007

Phys. Rev. B

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We have developed a theoretical model to analyze the anomalous cooling of radiative quantum dot (QD) excitons by THz radiation reported by Yusa et al [Proc. 24th ICPS, 1083(1998]. We have made three-dimensional (3D) modeling of the strain and the piezoelectric field and calculated the 3D density of states of strain induced quantum dots. On the basis of this analysis we have developed a spin dependent Monte Carlo model, which describes the carrier dynamics in QD's when the intraband relaxation is modulated by THz radiation. We show that THz radiation causes resonance transfer of holes from dark to radiative states in strain-induced QD's. The transition includes a spatial transfer of holes from the piezoelectric potential mimima to the deformation potential minimum. This phenomenon strongly enhances the QD ground state luminescence at the expense of the luminescence from higher states. Our model also reproduces the delayed flash of QD ground state luminescence, activated by THz radiation even ∼ 1 s after the carrier generation.Our simulations suggest a more general possibility to cool the radiative exciton subsystem in optoelectronic devices.

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Computational Single-Electronics

Cited by 201 publications

References 0 publications

Single-Electron Transistor (SET) Process and Device Simulation Using SYSNOPSYS TCAD Tools

Single-Electron Transistor (SET) Process and Device Simulation Using SYSNOPSYS TCAD Tools

Dielectric sensing by charging energy modulation in a nano-granular metal

Cooling of radiative quantum-dot excitons by terahertz radiation: A spin-resolved Monte Carlo carrier dynamics model

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