Computer simulation of layer‐by‐layer sputtering at grazing low‐energy ion‐surface interactions

Umarov, F. F.; Dzhurakhalov, A.A.

doi:10.1002/sia.5086

Cited by 4 publications

(3 citation statements)

References 14 publications

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“…In this section, the grazing ion sputtering processes of Si(001), SiC(001), and Cu 3 Au(001) surfaces at 0.5-5 keV Ne + bombardment have been studied by computer simulation [52,53].…”

Section: Ion Sputtering Of Single-crystal Surfacesmentioning

confidence: 99%

Ion Bombardment-Induced Surface Effects in Materials

Umarov¹,

Dzhurakhalov²

2016

Radiation Effects in Materials

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This chapter deals with the experimental research and computer simulation of low-and medium-energy (E 0 = 1-30 keV) ion collisions on the surface of a solid and of the accompanying effects, namely scattering, sputtering, and surface implantation. Experimental and computer simulation studies of low-energy (Е 0 = 80-500 eV) Cs + ions scattering on Ta, W, Re target surfaces and K + ions scattering on Ti, V, Cr target surfaces have been performed for more accurate definition of mechanism of scattering, with a purpose of evaluation of use of slow ions scattering as a tool for surface layer analysis. The peculiarities of the process of correlated small angle scattering of 5-15 keV He, Ne, Ar, Kr, Xe, and Rn ions by the Cu(100), Ni(100), and V(100) single-crystal surfaces have been investigated by computer simulation. It has been shown that under these conditions the inelastic energy losses become predominant over the elastic ones. The anomalous energy losses observed experimentally at the grazing ion scattering by the single-crystal surface were explained. It has been shown by computer simulation that the peculiarities of the chain effect at direct and reverse relation of masses of colliding particles and rainbow effect at quasi-single and quasi-double scattering of ions, heavier than adatoms, lead to the appearance of characteristic peaks in the energy and angular distributions of scattered ions. Analysis of these peaks and comparison with experiment give an opportunity to control the initial stages of adsorption and identification of adsorption structures with the help of low-energy ion scattering. It has been shown that from the correlation of the experimental and calculated energy distributions of the scattered particles, one may determine a spatial extension of the isolated atomic steps on the single-crystal surface damaged by the ion bombardment. Results obtained can be also used to study short-range order in alloys undergoing ordering. Grazing ionsputtering processes of Si(001), SiC(001), and Cu 3 Au(001) surfaces at 0.5-5 keV Ne + bombardment have been studied by computer simulations. A preferential emission of Cu atoms in the case of Cu 3 Au (001) surface sputtering is observed. It was shown that in the case of grazing ion bombardment, the layer-by-layer sputtering is possible, and its optimum is observed within the small angle range of the glancing angles near the threshold sputtering angle. The peculiarities of trajectories, ranges, and energy losses of low-energy different-mass ions channeling in thin single crystals of metals and semiconductors have been thoroughly studied by computer simulation. It has been ion bombardment, elastic and inelastic energy losses, vacancy and atomic steps defects on the surface, method of layer-by-layer analysis of single-crystal surface,

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“…In this section, the grazing ion sputtering processes of Si(001), SiC(001), and Cu 3 Au(001) surfaces at 0.5-5 keV Ne + bombardment have been studied by computer simulation [52,53].…”

Section: Ion Sputtering Of Single-crystal Surfacesmentioning

confidence: 99%

Ion Bombardment-Induced Surface Effects in Materials

Umarov¹,

Dzhurakhalov²

2016

Radiation Effects in Materials

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“…Implantation of Be and Se into GaAs allows one to make the acceptor and donor impurities in this semiconductor. For small crystal depths the approaches which are used in the analytical theory of orientation effects on the large depths, become unacceptable and a computer simulation methods for the channeling process modeling appear to be the most preferable [5,7,[9][10][11][12][13][14]. So the theoretical investigation of atomic collision processes in crystals caused by particle irradiation and deposition is usually done using computer simulation because real physical conditions (e.g.…”

Section: Introductionmentioning

confidence: 99%

“…So the theoretical investigation of atomic collision processes in crystals caused by particle irradiation and deposition is usually done using computer simulation because real physical conditions (e.g. complicated interatomic interaction potential, surfaces, interfaces, defects) can be taken into account much easier than it possible by using analytical methods [5,7,13,[14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

The Colliding Particles Mass Ratio Influence on Peculiarities of Low-Energy Ion Near-Surface Implantation at Channeling Conditions

Umarov

Rasulov

Dzhurakhalov

2018

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In the present work the peculiarities of ion implantation and colliding particles mass ratio influence on the ranges, energy loss and profiles of distribution for 1−5 keV P+ ions channelling in Si(110) and SiC(110) at normal incidence, and 1 keV Be+ and Se+ ions in GaAs(100), as well as 5 keV Ar+ and Kr+ on Cu(001) surface at glancing incidence are carried out by computer simulation in binary collision approximation. It is shown that for paraxial part of a beam the main contribution to the total energy loss comes from inelastic ones. It has been established that the energy loss of ions transmitted through thin crystal and depth profile distributions depend on width of the channel and mass ratio of colliding atoms. It was shown that at grazing surface channeling conditions the main peak of the implanted depth distributions is considerably shallow, the range for Se+ ions is shallower and the half-width of profile for these ions is narrow than that for Be+ ions. The results allow one to select the optimum for implanted depth distributions with demanded shape at narrow near-surface area of crystals obtaining.

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