IntroductionBulk single crystals of compound semiconductors such as GaAs and InP are very important materials for the substrates of various electronic devices. The Czochralski technique is widely used for the growth of these crystals. However, container crystal growth techniques, i.e. the vertical gradient freezing (VGF) and vertical Bridgman (VB) techniques are very promising because they can grow crystals without diameter control in a lower axial-thermal-gradient than that of the Czochralski method [1].Components of compound semiconductor melts such as As and P are very easy to evaporate. Therefore, in order to grow high-quality crystals, it is required to suppress the volatilization and maintain the stoichiometry of the components during growth. From this point of view, the liquid encapsulated vertical Bridgman (LE-VB) technique[2] and the liquid encapsulated vertical gradient freezing (LE-VGF) technique[3] have been proposed. Recently, Matsumoto et al.[4] have successfully grown twin-free bulk single crystals of InP by the LE-VB technique with a flat bottom crucible and Okada et al.[5] have grown ZnSe single crystals by the LE-VB technique.In order to grow high-quality single crystals, it is necessary to control the flow and temperature fields which affect the melt/crystal interface shape and segregation phenomena during crystal growth. However, it is impossible to observe and measure these phenomena during crystal growth because the crystal is grown in a crucible under high pressure. Therefore, numerical simulation is attractive for the establishment of the optimum furnace design and growth conditions, and many numerical studies have been reported [6]. A pseudo steadystate has been assumed in numerous studies [7][8][9][10][11][12][13][14][15][16]. Recently, three-dimensional calculations on the VB crystal growth system have been reported [17,18].Kim and Brown have performed a transient analysis on the VGF [19] and VB [20,21] crystal growth systems by the finite element method. Kuppurao et al.