Computer simulation of plasma for plasma immersed ion implantation and deposition with bipolar pulses

Miyagawa, Y.; Ikeyama, M.; Miyagawa, S.; Nakadate, H.

doi:10.1016/s0168-583x(03)00845-0

Cited by 22 publications

(10 citation statements)

References 7 publications

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“…Sheath expansion around a trench shaped object [4,7] In PIII, a negative pulsed high voltage is applied to the object immersed in a low-pressure high-density plasma. The simulations were performed for such PIII condition with a trench shaped object.…”

Section: Resultsmentioning

confidence: 99%

“…[4]. Depending on the gas density and the calculation time, PEGASUS uses each two modules: for plasma simulation, Plasma Hybrid Module (PHM) and the Particlein-Cell-Monte Carlo Collision Module (PIC-MCCM) and for the simulation of gas field, the Neutral Momentum Equation Module (NMEM) and the Direct Simulation Monte Carlo Module (DSMCM).…”

Section: Simulation Methodsmentioning

confidence: 99%

“…For this purpose, simulations based on several models have been performed [2,3]. We have used the simulation software "PEGASUS" [4]. The software uses the PIC-MCC method together with the dynamic-SASAMAL code [5,6] for the ion-solid surface interactions.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Plasma analysis for the plasma immersion ion implantation processing by a PIC-MCC simulation

Miyagawa

Ikeyama

Miyagawa

et al. 2007

Computer Physics Communications

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Section: Resultsmentioning

confidence: 99%

Section: Simulation Methodsmentioning

confidence: 99%

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Plasma analysis for the plasma immersion ion implantation processing by a PIC-MCC simulation

Miyagawa

Ikeyama

Miyagawa

et al. 2007

Computer Physics Communications

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“…This law is used in many fields of physics [5][6][7], for example in semiconductor physics [8,9]. Recent studies focus on 2D or time dependent behaviour [5,10]. In this paper we study plasma surface physics by measuring ion flux coming from a positive Child-Langmuir transition between plasma and a copper sample.…”

Section: Introductionmentioning

confidence: 99%

Positive sheath behaviour in low pressure Argon plasma

Schiesko¹,

Carrère²,

Cartry³

et al. 2007

Journal of Nuclear Materials

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“…Thus the sheath thickness, the electric field and potential distributions within the ion-matrix sheath can be calculated by Poisson's equation [1,8 10] . During the period of sheath propagation, the ion velocity, energy, flux, dose and incidence angle at different positions of the target can be calculated by various models of ion sheath evolution [11 32] , such as the analytical model [11 15] , the fluid model [16 20] , the particle-in-cell (PIC) model [21 28] , the Monte Carlo (MC) model [29 31] and the PIC/MC model [32] . One-dimensional model can be used for the case of planar, cylindrical or spherical target [1,12,16,17,25] .…”

mentioning

confidence: 99%

Simulation methods of ion sheath dynamics in plasma source ion implantation

Wang¹

2004

Chinese Sci Bull

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Progress of the theoretical studies on the ion sheath dynamics in plasma source ion implantation (PSII) is reviewed in this paper. Several models for simulating the ion sheath dynamics in PSII are provided. The main problem of nonuniform ion implantation on the target in PSII is discussed by analyzing some calculated results. In addition, based on the relative researches in our laboratory, some calculated results of the ion sheath dynamics in PSII for inner surface modification of a cylindrical bore are presented. Finally, new ideas and tendency for future researches on ion sheath dynamics in PSII are proposed.Keywords: plasma sheath simulation, plasma source ion implantation, fluid model, particle simulation, inner surface plasma source ion implantation.Plasma source ion implantation (PSII) has been a well-known technique to modify surface properties of materials. It has many advantages over conventional ion beam implantation, i.e. it is non-line-of-sight accessible, cost-effective and it can be easily operated. In PSII, a target is immersed in a plasma. When a series of negative high-voltage ( 10 100 kV) pulses are applied to the target, ions are extracted directly from the plasma and accelerated to the target for implantation. Since the technique was proposed by Conrad in 1986 [1,2] , many experiments have performed and shown its superiorities in improving the surface hardness, the resistance to wear and corrosion of materials [3 6] .The ion dose and impact energy are the most important factors to determine the result of PSII, and the two factors depend mainly on the dynamics of ion sheath evolution. Therefore, theoretical studies on the ion sheath dynamics emerged and have been continuously developing, giving guidance for the PSII techniques. The physical model of ion sheath forming and expanding in PSII (Fig. 1) is: When a sudden negative voltage is applied to the target, initially, in the time scale of the inverse electron plasma frequency ( pe 1 ), electrons near the target are driven away, on this time scale the ion motion is negligible so that as the electrons recede, they leave behind a region of nearly uniform ion space charge around the target, which is called the "ion-matrix sheath". Subsequently, on the time scale of the inverse ion plasma frequency ( pi 1 ), ions within the sheath are accelerated into the target as they fall through the ion-matrix sheath. This, in turn, drives the sheath-plasma edge further away, exposing new ions that are extracted. Finally, on a longer time scale, the system evolves toward a steady-state Child law sheath. Fig. 1. Schematic diagram of ion sheath evolution in PSII.Based on the above physical model, before the sheath expansion, the ion density in the sheath can be assumed uniform. Thus the sheath thickness, the electric field and potential distributions within the ion-matrix sheath can be calculated by Poisson's equation [1,8 10] . During the period of sheath propagation, the ion velocity, energy, flux, dose and incidence angle at different positions of the target...

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Computer simulation of plasma for plasma immersed ion implantation and deposition with bipolar pulses

Cited by 22 publications

References 7 publications

Plasma analysis for the plasma immersion ion implantation processing by a PIC-MCC simulation

Plasma analysis for the plasma immersion ion implantation processing by a PIC-MCC simulation

Positive sheath behaviour in low pressure Argon plasma

Simulation methods of ion sheath dynamics in plasma source ion implantation

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