Computer simulation of proton channelling in silicon

Abstract

The channelling of 3 MeV protons in the ½½¼ direction of silicon has been simulated using Vineyard model taking into account thermally vibrating nuclei and energy loss due to ionelectron interactions. A beam made up of constant energy particles but with spatial divergence has been simulated for the purpose. The values of the minimum scattering yield and half width of the channelling dip are shown to be depth sensitive and agree well with the measured values. The dependence of yield on the angle of incidence has been found to give information of all three types of channelling. The critical angles for the three types of channelling and wavelength of planar oscillations are consistent with the previous calculations.

Structural Channels as Natural Tracks in Crystal

“…As follows from (6.1), the critical angle in the channeling effect decreases when the energy of ions increases. Theoretical studies and experimental measurements show that in typical cases the critical angle is AE5 in the energy [26] region $10 keV and is AE1 when the energy is $1 MeV [25]. All the presented considerations are valid for heavy charge particles, but not for electrons or positrons.…”

“…6.2 [26]. As follows from (6.1), the critical angle in the channeling effect decreases when the energy of ions increases.…”

Lattice location of dopant atoms: An N-body model calculation

“…Picraux et al [2] do not specify this value. It is clearly shown [15] that both the χ min and ψ 1/2 values are dependent on the value of azimuthal angle θ 0 . Hence the values in the present work appear more reliable and consistent.…”

“…When more than one lattice sites are occupied, the problem is compounded further. In this calculation, we have, therefore applied the N -body model [15] for locating dopant atoms. …”