Computer simulation of sputtering and implantation processes under grazing ion bombardment of binary crystal surface

The Colliding Particles Mass Ratio Influence on Peculiarities of Low-Energy Ion Near-Surface Implantation at Channeling Conditions

“…At the angles of incidence where the minimum of the dependence is observed (Fig. 3b) the incident ions are intensively reflected by surface semichannels because of the ion focusing effect [9].…”

“…Channeling of low-energy ions in metal and semiconductor single crystals offers the opportunity to create the method of local ion implantation in ultrathin film nanotechnology and surface nanoengineering. Therefore ranges, energy loss and profiles of distribution of low-energy ions channeling in crystals have received considerable experimental and theoretical interest [6][7][8][9][10][11][12]. In the present work for revealing of the influence of colliding particles mass ratio µ (where µ = m 2 /m 1 is the mass ratio of target atom and ion, respectively) on the ranges, energy loss and profiles of distribution the channelling of 1−5 keV P + ions in Si(110) and SiC(110) at normal incidence and 1 keV Be + and Se + ions in GaAs(100) at glancing incidence is carried out by computer simulation in binary collision approximation.…”

“…Implantation of Be and Se into GaAs allows one to make the acceptor and donor impurities in this semiconductor. For small crystal depths the approaches which are used in the analytical theory of orientation effects on the large depths, become unacceptable and a computer simulation methods for the channeling process modeling appear to be the most preferable [5,7,[9][10][11][12][13][14]. So the theoretical investigation of atomic collision processes in crystals caused by particle irradiation and deposition is usually done using computer simulation because real physical conditions (e.g.…”