Computer simulation of thermally stimulated depolarization currents due to charge carrier injection from contacts

Abstract

Using computer simulation the possibility of a thermally stimulated depolarization current (TSDC) peak due to electron injection from contacts is considered. Calculations are performed for a semiconductor containing one donor level and partially blocking contacts. It is shown that electron injection from the contacts can be one of the reasons of TSDC peak inversion. The latter depends on the relations between the heights of potential barriers at cathode and anode.

The effect of contact junctions on thermally stimulated depolarization current in thin semiconductor films

“…With reference to the problem of the transient current of monopolar injection, a similar system was used by Many and Rakavi [3] as well as Helfrich and Mark [4], assuming the field strength within the cathode region does not depend on time being zero; thus, the charge-carrier concentration within this junction is unrestricted. The theory of non-steady-state currents in dielectric and semiconductor layers taking into account the conditions at the interface is described in [5,6]; the possibility of using similar non-steady-state equations for the analysis of TSD currents solved by the method of numerical analysis is considered in [7,8].…”