Computer simulation study of the MOCVD growth of titanium dioxide films

Nami, Z.; Misman, O.; Erbil, A.; May, G.S.

doi:10.1016/s0022-0248(96)00499-x

Cited by 15 publications

(12 citation statements)

References 20 publications

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“…Due to the small concentration of TTIP in the carrier gas, the mass diffusivity, viscosity, and thermal conductivity of the fluid mixture were taken as constant and equal to those of the nitrogen gas, as proposed by Nami et al [22] The heat capacity for the gas mixture was calculated as the mass fraction average of the pure species heat capacities (c p ¼ P Y i c p ; i) and the gas mixture density (r) was calculated based on the ideal gas law for an incompressible gas where R is the universal gas constant, P the pressure, Y i is the mass fraction of each species, which was calculated in FLUENT, through the solution of the continuity equation for the i th species. …”

Section: Appendixmentioning

confidence: 99%

“…For example, the sintering of TiO 2 particles on hot-wall reactors has been modeled, [20] while TiO 2 film deposition on a cold-wall reactor has also been dealt with. [21,22] In a previous study, [23] we have simulated atmospheric MOCVD, and the effect of substrate temperature on the deposition rate was investigated under a fixed precursor partial pressure. In the present paper special attention is paid to the role of the substrate temperature, …”

Section: Introductionmentioning

confidence: 99%

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Study of Atmospheric MOCVD of TiO₂ Thin Films by Means of Computational Fluid Dynamics Simulations

Baguer

Neyts

Gils

et al. 2008

Chemical Vapor Deposition

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This paper presents the computational study of the metal-organic (MO) CVD of titanium dioxide (TiO 2 ) films grown using titanium tetraisopropoxide (TTIP) as a precursor and nitrogen as a carrier gas. The TiO 2 films are deposited under atmospheric pressure. The effects of the precursor concentration, the substrate temperature, and the hydrolysis reaction on the deposition process are investigated. It is found that hydrolysis of the TTIP decreases the onset temperature of the gas-phase thermal decomposition, and that the deposition rate increases with the precursor concentration and with the decrease of substrate temperature. Concerning the mechanism responsible for the film growth, the model shows that at the lowest precursor concentration, the direct adsorption of the precursor is dominant, while at higher precursor concentrations, the monomer deposition becomes more important.

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Section: Appendixmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Study of Atmospheric MOCVD of TiO₂ Thin Films by Means of Computational Fluid Dynamics Simulations

Baguer

Neyts

Gils

et al. 2008

Chemical Vapor Deposition

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“…Thin films will also have a place when there is a need to integrate capacitors either onto high temperature electronic packages, or off chip as it is sometimes referred. A number of dielectric materials have been deposited in the form of thin films using techniques like MOCVD (Stauf 1998;Nami 1997), PECVD (Trigg 1998;Lenihan 1996), Anodization (Nelms 1998), Sputtering (Kapadia 1998;Kim 1998;Tsukada 1995;Simamotol992;Vorotilov 1999;Suu 1998), Hydrolysis (Sakabe 1998), and PLD (O'Neill 1998; Noda 1999) etc.…”

Section: Passive Device Selectionmentioning

confidence: 99%

High-Temperature Electronics in Europe

Dmitriev¹,

Chow²,

DenBaars³

et al. 2000

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Support is provided by a variety of U.S. government agencies, including ONR, DoC, and NSF.ITRI's mission is two-pronged: (1) to inform U.S. policymakers, strategic planners, and managers of the state of selected technologies in foreign countries in comparison to the United States; and (2) to identify opportunities for international cooperation among countries and collaboration among researchers. ITRI assessments cover basic research, advanced development, and applications. Panels of typically six technical experts conduct these assessments. Panelists are leading authorities in their fields, technically active, and knowledgeable about U.S. and foreign research programs. As part of the assessment process, panels visit and carry out extensive discussions with foreign scientists and engineers in their labs.The ITRI staff at Loyola College helps select topics, recruits expert panelists, arranges study visits to foreign laboratories, organizes workshop presentations, and finally, edits and disseminates the final reports. HIGH-TEMPERATURE ELECTRONICS IN EUROPE August 2000Vladimir Dmitriev (Chair) T. Paul Chow Steven P. DenBaars Michael S. Shur Michael G. Spencer George White This document was sponsored by the Office of Naval Research (ONR) and the National Science Foundation (NSF) under ONR Grant NOOO14-99-1-0529 and NSF Cooperative Agreement ENG-9707092, both awarded to the International Technology Research Institute at Loyola College in Maryland. The government has certain rights in this material. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the United States government, the authors' parent institutions, or Loyola College. ABSTRACTThis final report of ITRI's panel on high-temperature electronics in Europe consists of an executive summary, an introductory chapter, and six chapters by panel members on various aspects of wide bandgap electronics. The report also contains site reports for the various companies, labs, universities, and government offices that the panel visited in Europe. Comparisons are made between developments in Europe and the United States. Principal findings include: • European scientists and engineers see optoelectronics and high-power, high-frequency electronics as the major application opportunities for wide bandgap semiconductors.• The size of the GaN and SiC technology and device development effort in Europe is comparable with that in the United Statews.• Europe is ahead of the U.S. in in bulk GaN growth technology.• The United States is currently ahead in GaN-based device developments for light emitters, and high-power/high-frequency applications.• In silicon carbide technology, the U.S. is ahead in SiC bulk crystal and epitaxial production.• In R&D silicon carbide effort, European organization both academic and industrial have recently demonstrated outstanding results in both material growth (bulk and epi) and device development proving the leading position in the world; in the area ...

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“…The boundary conditions for this differential equation for a rectangular coordinate system XZ (see Fig. 1) are [11] (1) (2) where is the diffusion coefficient of the reactant in the gas phase, is the mass transfer coefficient, is a unit vector normal to the gas-solid interface, and is the local flux at the growth interface. The second boundary condition is the continuity of mass flux at the interface.…”

Section: Development Of Analytical Deposition Rate Modelmentioning

confidence: 99%

“…The most sophisticated CVD models are based on the solution of transport equations describing the macroscopic behavior of the gas mixture in the reactor chamber. These models use computational fluid dynamics (CFD) to describe temperature distributions, gas circulation patterns, and reactant concentrations in CVD process chambers [2]. Although these CFD models accurately describe physical phenomena within the process chamber, their slow runtime and computational expense makes them unsuitable for use in process control applications.…”

Section: Introductionmentioning

confidence: 99%

Semi-empirical neural network modeling of metal-organic chemical vapor deposition

Nami

Misman

Erbil

et al. 1997

IEEE Trans. Semicond. Manufact.

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Metal-organic chemical vapor deposition (MOCVD)is an important technique for growing thin films with various applications in electronics and optics. The development of accurate and efficient MOCVD process models is therefore desirable, since such models can be instrumental in improving process control in a manufacturing environment. This paper presents a semiempirical MOCVD model based on "hybrid" neural networks. The model is constructed by characterizing the MOCVD of titanium dioxide (TiO 2 ) films through the measurement of deposition rate over a range of deposition conditions by a statistically designed experiment in which susceptor and source temperature, flow rate of the carrier gas for the precursor and chamber pressure are varied. A modified backpropagation neural network is then trained on the experimental data to determine the value of the adjustable parameters in an analytical expression for the TiO2 deposition rate. In so doing, a general purpose methodology for deriving semi-empirical neural process models which take into account prior knowledge of the underlying process physics is developed.

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Computer simulation study of the MOCVD growth of titanium dioxide films

Cited by 15 publications

References 20 publications

Study of Atmospheric MOCVD of TiO₂ Thin Films by Means of Computational Fluid Dynamics Simulations

Study of Atmospheric MOCVD of TiO₂ Thin Films by Means of Computational Fluid Dynamics Simulations

High-Temperature Electronics in Europe

Semi-empirical neural network modeling of metal-organic chemical vapor deposition

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Computer simulation study of the MOCVD growth of titanium dioxide films

Cited by 15 publications

References 20 publications

Study of Atmospheric MOCVD of TiO2 Thin Films by Means of Computational Fluid Dynamics Simulations

Study of Atmospheric MOCVD of TiO2 Thin Films by Means of Computational Fluid Dynamics Simulations

High-Temperature Electronics in Europe

Semi-empirical neural network modeling of metal-organic chemical vapor deposition

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Study of Atmospheric MOCVD of TiO₂ Thin Films by Means of Computational Fluid Dynamics Simulations

Study of Atmospheric MOCVD of TiO₂ Thin Films by Means of Computational Fluid Dynamics Simulations