Computer studies of the reflection of light ions from solids

Oen, O.S.; Robinson, M. T.

doi:10.1016/0029-554x(76)90806-5

Cited by 658 publications

(42 citation statements)

References 12 publications

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“…When the ion energy is further reduced, core electrons cannot be excited efficiently and details of the density of states in the valence and conduction band of the solid become important. Even if in this regime the projectiles interact only with the delocalized electrons, correlation between elastic and inelastic processes was suggested by Oen and Robinson in an empirical model [12]. In contrast, comprehensive comparison of experimental energy spectra to Monte Carlo simulations revealed that the origin of the surface peak (single scattering peak), which is the most pronounced feature in charge integrated spectra in low energy ion scattering (LEIS), can only be explained by applying a nonlocal energy loss model [13].…”

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confidence: 96%

Electronic Excitations of Slow Ions in a Free Electron Gas Metal: Evidence for Charge Exchange Effects

et al. 2011

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Electronic energy loss of light ions transmitted through nanometer films of Al has been studied at very low ion velocities. For hydrogen, the electronic stopping power S is found to be perfectly proportional to velocity, as expected for a free electron gas. For He, the same is anticipated, but S shows a transition between two distinct regimes, in both of which S is velocity proportional-however, with remarkably different slopes. This finding can be explained as a consequence of charge exchange in close encounters between He and Al atoms, which represents an additional energy loss channel.

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confidence: 96%

Electronic Excitations of Slow Ions in a Free Electron Gas Metal: Evidence for Charge Exchange Effects

et al. 2011

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“…Also at about this time, a work began in Oak Ridge that originally aimed at testing an analytical theory of particle ranges developed by Holmes and Leibfried [20]. In original works [6,21,22], a structureless target was used, but a model based on a crystalline target was soon developed [23,24], and this made possible the prediction of ion channeling. In both codes, Gaussian quadrature methods were used to evaluate the classical scattering integrals using realistic (though still simplified) interaction potentials.…”

Section: Methodsmentioning

confidence: 99%

Computer Simulation of Scattering Xe<sup>+</sup> Ions from InP(001)❬110❭ Surface at Grazing Incidence

Karimov

Jamoladdinovich

qizi

et al. 2019

e-J. Surf. Sci. Nanotechnol.

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The article describes a new possibility of study by the method of computer simulation the energy and angular distribution of Xe + ions scattered from the InP(001)❬110❭ surface at glancing incidence by initial energies of 1 keV and 3 keV. It is shown that glancing scattered ions formed double peaks in energy distribution curves which corresponded to the scattered ions from surface atomic rows and semichannels. It was shown that, at grazing surface semichanneling conditions, an intense peak arising from the effect of ion focusing was observed in the angular distribution. The results allow studies of semiconductor surfaces by using low energy ion scattering spectroscopy.

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“…5 and Table II). For the target atoms, this is done by using an equipartition of Oen-Robinson (local) [157] and Lindhard-Scharff (nonlocal) [158,159] models. A cutoff energy of 0.5 eV is chosen for the projectiles.…”

Section: Appendix: Simulating Muon Implantationmentioning

confidence: 99%

Depth-Resolved Measurements of the Meissner Screening Profile in Surface-Treated Nb

McFadden

Prokscha

et al. 2023

Phys. Rev. Applied

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We report depth-resolved measurements of the Meissner screening profile in several surface-treated Nb samples using low-energy muon spin rotation. In these experiments, implanted positive muons, whose stopping depths below Nb's surface are adjusted between approximately 10 nm and 150 nm, reveal the field distribution inside the superconducting element via their spin precession (communicated through their radioactive decay products). We compare how the field screening is modified by different surface treatments commonly used to prepare superconducting radio-frequency cavities used in accelerator beamlines. In contrast to an earlier report [A. Romanenko et al., Appl. Phys. Lett. 104, 072601 (2014)], we find no evidence for any "anomalous" modifications to the Meissner profiles, with all data being well described by a London model. Differences in screening properties between surface treatments can be explained by changes to the carrier mean free paths resulting from dopant profiles near the material's surface.

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Computer studies of the reflection of light ions from solids

Cited by 658 publications

References 12 publications

Electronic Excitations of Slow Ions in a Free Electron Gas Metal: Evidence for Charge Exchange Effects

Electronic Excitations of Slow Ions in a Free Electron Gas Metal: Evidence for Charge Exchange Effects

Computer Simulation of Scattering Xe<sup>+</sup> Ions from InP(001)❬110❭ Surface at Grazing Incidence

Depth-Resolved Measurements of the Meissner Screening Profile in Surface-Treated Nb

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