Concave corner compensation between vertical (010)-(001) planes anisotropically etched in Si (100)

Nikpour, B.; Landsberger, L. M.; Hubbard, Ted; Kahrizi, Mojtaba; Iftimie, A.

doi:10.1016/s0924-4247(97)01753-6

Cited by 8 publications

(3 citation statements)

References 4 publications

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“…In addition, ECM can easily obtain convex, right-angled corners. This demonstrates one advantage of ECM over conventional micromachining, since such a kind of microstructures with convex corners are not easily obtainable with techniques such as wet chemical etching. − Additionally, wet chemical etching is impossible with highly doped Si due to etch stop processes.…”

Section: Resultsmentioning

confidence: 99%

“…One of the main difficulties, however, concerns the etching at convex and concave corners 1-4 where the intersection of two or more {111} planes generates complex and poorly controllable phenomena. So-called corner compensation remains a challenging question despite years of experience, − and the technique has proven to be an art more than a science. Therefore, the design of MEMS devices requires dedicated research efforts, including numerical simulations to predict etched shapes 4,10 and define suitable process sequences of fabrication.…”

Section: Introductionmentioning

confidence: 99%

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Electrochemical Micromachining of p-Type Silicon

et al. 2004

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Electrochemical micromachining (ECM) of p-type Si substrates is accomplished in HF-based solutions by applying nanosecond potential pulses between the substrate and a tungsten tool electrode. With sufficiently high potential pulses, the silicon potential locally reaches the electropolishing regime and microstructures may be machined. ECM precision is investigated as a function of pulse height, pulse duration, solution composition, and silicon doping level. Results show that micrometer precision may be obtained with highly doped substrates and that experimental data can be explained within a simple model, taking the charging time of the interface capacitance into account. In highly doped p-Si, well-defined microstructures can be realized without application of a mask on the surface. In addition, the isotropy of the process allows fabrication of structures not constrained by the crystal direction. In the case of low-doped material, ECM is only possible for very short pulses (<3 ns).

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electrochemical Micromachining of p-Type Silicon

et al. 2004

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“…Generally, wet etching can produce well controlled patterns such as rectangular shapes with a {1 0 0} orientation in silicon; however, convex corners are commonly over-etched leaving membrane structures that can be damaged by processing and handling or creating a situation of rapid undercutting of corners that consumes the structure being patterned before it can be completely formed. Various studies have investigated optimizing such an etching procedure by adding corner compensation to the process [10][11][12][13][14][15][16][17][18][19]. Corner compensation ensures the desired shape of the recess by using sacrificial structures that are designed to essentially protect certain geometrical specifications.…”

Section: Introductionmentioning

confidence: 99%