Concentration Dependence of the Hall Factor in n‐InSb and p‐InSb

On the nature of deep donors created at 450 °C in boron-doped p-Si

“…Using ESR measurements with and without sample illumination (with the energy of light quanta exceeding the band gap) we analyzed the state (and the concentration) of phosphorus impurity both in the initial p-Si (B) material and in the samples annealed for 2 to 240 h. These experiments showed that the phosphorus concentration in the annealed samples remained unchanged while its charge state changed in accordance with the Fermi level shift (due to TD generation during annealing). The fact that the phosphorus concentration remains unchanged was clearly proved by us in [7] where the restoration of the ESR phosphorus spectrum without sample illumination after prolonged annealing of ingot N2 samples was reported. Note that both suggestions proposed for the description of the behavior of curve 4 in Fig.…”

“…However, in spite of ample experimental results obtained from ESR and Hall effect measurements, neither [4] nor[7] gave final conclusions on the role of boron impurity in the formation process of these centers. It was only supposed[7] that the maximum concentration of paramagnetic centers in thermally treated p-Si samples depends rather on the acceptor boron impurity content than on the total TD concentration. The two methods used are insufficient to answer the question whether boron is incorporated into TDs or not.…”

Hall Effect in Strongly Degenerate n‐Ge

“…This suggests that the in- The solid parts of these curves (for the interval of n mann statistics is applicable) are based on the anisotropy scattering theory developed in (8). The qualitative course of the broken lines is depicted on the basis of data of (7) and the location of the maxima of curves 1 and 2 in the scale of concentrations, found from formula (3).…”

Longitudinal magnetoresistance in polar semiconductors

“…where g is the E -» form of g. Equation (43) The steady-state equations for carrier momentum and energy can be written in the forms eqs (9) and (10) (39) and (41) We thus write, using eq (7 …”

“…(9) and (18) The phonon scattering expressions (18) and (19) Ehrenreich, gives precisely eq (37) in lowest order approximation.…”