Concentration of the emission spectrum of broad-band solid-state lasers

Abstract

One-dimensional distributions of net donor impurity density along the direction of current flow in Gunn diodes have been observed by making use of the signal due to the electron-beam-induced conductivity (/-conductivity). It is shown that the resultant voltage signals are able to reveal clearly various types of doping profiles in the active layers of the Gunn diodes. The relation between the features of the signals and the diode characteristics is examined, and it is confirmed that the deterioration of the diodes is due to the asymmetrical doping profile.

Intracavity laser spectrum analyzers for diagnostics of fullerenic molecular clusters

“…1 . There are results of studying of features of SC effect caused by presence in heterogeneous plasma excited and of ionized atoms of rare-earth metals in [6][7][8][9] In this phenomenon was observed for the first time due to presence in a torch of an electric arch fulleren C60. Identity of character of occurrence of condensation lines was registered in the same work at additives in plasma of impurity C60 and cerium (or others rare-earth metals).…”

“…chge of a spectrum of generation of GSGG:cr3 laser at presence in its resonator of light-erosive torch, arising after irradiation of targets from carbon(2)(3)(4)(5)(6)(7)(8)(9) or carbon with cerium (1 1-22, 24-30, 32-35) by neodymium laser working in the modes: frequency -periodical with porosity between short pulses t-lO -6 (27) t'--6 (26), t-35 -6 (29) and t-5O 6 (28); quasi-continuous (32-35); free generation (2-9, 11-22). Registration of "time cuts" changes of spectra of generation of GSGG:cr3 laser was carried out through 25 -6 (2-9, 32-35) and 10 s(1 1-22).…”