Concentration quenching of the emission of F3+and F2color centers in LiF

Baldacchini, G.; Menchini, Francesca; Montereali, R. M.

doi:10.1080/10420150108214095

Cited by 11 publications

(8 citation statements)

References 8 publications

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“…2͒ and, therefore, they can be simultaneously excited by a single pumping wavelength. [20][21][22] The previous electronic defects are particularly interesting for the LiF application as x-ray detector, because they are efficiently created by low penetrating ionizing radiation and, under blue-light pumping, they efficiently emit light in the visible spectral range, with higher efficiency than other more complex generated CCs. In conclusion, despite the fact that more complex defects could appear under soft x-ray irradiation of LiF crystals, only the F 2 and F 3 + CCs are worth analyzing for understanding the principles of x-ray images formation in LiF.…”

Section: A Principles Of Lif Colorationmentioning

confidence: 99%

“…In entirely colored LiF crystals irradiated by 5 MeV electrons, under continuous blue radiation pumping, the luminescence increases linearly with the concentration of the F 3 + and F 2 centers up to ϳ10 16 centers/ cm 3 and ϳ10 18 centers/ cm 3 , respectively. 22 With further increasing the CCs density, up to 10 20 CCs/ cm 3 , the luminescence undergoes a saturation effect 22 and the emission efficiency decreases.…”

Section: A Principles Of Lif Colorationmentioning

confidence: 99%

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Soft x-ray submicron imaging detector based on point defects in LiF

Baldacchini¹,

Bollanti²,

Bonfigli³

et al. 2005

Review of Scientific Instruments

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The use of lithium fluoride ͑LiF͒ crystals and films as imaging detectors for EUV and soft-x-ray radiation is discussed. The EUV or soft-x-ray radiation can generate stable color centers, emitting in the visible spectral range an intense fluorescence from the exposed areas. The high dynamic response of the material to the received dose and the atomic scale of the color centers make this detector extremely interesting for imaging at a spatial resolution which can be much smaller than the light wavelength. Experimental results of contact microscopy imaging of test meshes demonstrate a resolution of the order of 400 nm. This high spatial resolution has been obtained in a wide field of view, up to several mm 2 . Images obtained on different biological samples, as well as an investigation of a soft x-ray laser beam are presented. The behavior of the generated color centers density as a function of the deposited x-ray dose and the advantages of this new diagnostic technique for both coherent and noncoherent EUV sources, compared with CCDs detectors, photographic films, and photoresists are discussed.

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Section: A Principles Of Lif Colorationmentioning

confidence: 99%

Section: A Principles Of Lif Colorationmentioning

confidence: 99%

Soft x-ray submicron imaging detector based on point defects in LiF

Baldacchini¹,

Bollanti²,

Bonfigli³

et al. 2005

Review of Scientific Instruments

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“…16 We found that the emission of the F 2 centers is practically unaffected by the temperature variation, while this is not the case for the F 3 ϩ centers. 16 We found that the emission of the F 2 centers is practically unaffected by the temperature variation, while this is not the case for the F 3 ϩ centers.…”

Section: Discussionmentioning

confidence: 60%

Concentration Quenching of Photoluminescence

Baldacchini

Menchini

Montereali

2003

J. Electrochem. Soc.

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The relative emission efficiency of F 3 ϩ and F 2 centers as a function of their concentration has been investigated in LiF crystals colored at room temperature and Ϫ60°C with 3 MeV electrons. From a careful study of their absorption and emission spectra, we discovered that the emission efficiency of both F 3 ϩ and F 2 defects is constant up to ϳ10 16 centers/cm 3 . When increasing the concentration up to 10 18 centers/cm 3 , decreases slightly for the F 2 centers and considerably for the F 3 ϩ ones, a difference which is bigger at room temperature with respect to liquid nitrogen temperature. A thermally activated process is taking place, where the F 2 center and other aggregated defects play an important role.

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“…However, its me-chanism is not fully understood. The increase of the concentration of aggregate color centers could give rise of non-radiative processes (concentration quenching) originated by an energy transfer between aggregate centers [11]. In [12] the quenching of photoluminescence at high concentration of aggregate centers is related to appearance of mechanical stress, suppressing the radiative decay of excited states.…”

Section: Depth-resolved Photoluminescence Of F2 and F3mentioning

confidence: 99%

Depth profiles of aggregate centers and nanodefects in LiF crystals irradiated with 34 MeV 84Kr, 56 MeV 40Ar and 12 MeV 12C ions

Dauletbekova

Skuratov

Kirilkin³

et al. 2018

Surface and Coatings Technology

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Depth profiles of nanohardness and photoluminescence of F2 and F3 + centers in LiF crystals irradiated with 12 MeV 12 C, 56 MeV 40 Ar and 34 MeV 84 Kr ions at fluences 10 10-10 15 ions/cm 2 have been studied using laser scanning confocal microscopy, dislocation etching and nanoindentation techniques. The room temperature irradiation experiments were performed at DC-60 cyclotron (Astana, Kazakhstan). It was found that the lumi-nescence intensity profiles of aggregate color centers at low ion fluences correlate with electronic stopping profiles. The maximum intensity of aggregate center luminescence is observed at fluence around 10 13 ions/cm 2 and rapidly decreases with further increase of fluence. At the highest ion fluences, the luminescence signal is registered in the end-of-range area only. The depth profiles of nanohardness and chemical etching have shown remarkable ion-induced formation of dislocations and increase of hardness which in the major part of the ion range correlate with the depth profile of electronic energy loss. An exception is the end-of-range region where strong contribution of nuclear energy loss to hardening at high fluences is observed.

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Concentration quenching of the emission of F₃⁺and F₂color centers in LiF

Cited by 11 publications

References 8 publications

Soft x-ray submicron imaging detector based on point defects in LiF

Soft x-ray submicron imaging detector based on point defects in LiF

Concentration Quenching of Photoluminescence

Depth profiles of aggregate centers and nanodefects in LiF crystals irradiated with 34 MeV 84Kr, 56 MeV 40Ar and 12 MeV 12C ions

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