Concepts of Backscattering Spectrometry

Chu, W. K.; Mayer, J. W.; Nicolet, M.‐A.

doi:10.1016/b978-0-12-173850-1.50008-9

Cited by 1,081 publications

(894 citation statements)

References 9 publications

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“…3.12 of [44]) by Equation 4, and refers to the energy lost by the particle scattered from element C of the matrix M; that is, considering both the energy lost inelastically by the incident beam before the scattering event and by the scattered beam on its way to the detector, together with the energy lost elastically (to the recoiled nucleus) during the scattering event. It is because ε is a function of beam energy, and of course because the energy lost kinematically by the incident ion to the target recoiled nucleus in the elastic backscattering event depends on the mass of C, that the stopping factor is a function of both C and M.…”

Section: Equationmentioning

confidence: 99%

Accurate Determination of Quantity of Material in Thin Films by Rutherford Backscattering Spectrometry

2012

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Ion beam analysis (IBA) is a cluster of techniques including Rutherford and non-Rutherford backscattering spectrometry, and particle-induced X-ray emission (PIXE). Recently, the ability to treat multiple IBA techniques (including PIXE) self-consistently has been demonstrated. The utility of IBA for accurately depth profiling thin films is critically reviewed. As an important example of IBA, three laboratories have independently measured a silicon sample implanted with a fluence of nominally 5.1015As/cm2 at an unprecedented absolute accuracy. Using 1.5 MeV 4He+ Rutherford backscattering spectrometry (RBS), each lab has demonstrated a combined standard uncertainty around 1% (coverage factor k=1) traceable to an Sb-implanted certified reference material through the silicon electronic stopping power. The uncertainty budget shows that this accuracy is dominated by the knowledge of the electronic stopping, but that special care must also be taken to accurately determine the electronic gain of the detection system and other parameters. This RBS method is quite general and can be used routinely, to accurately validate ion implanter charge collection systems, to certify SIMS standards, and for other applications. The generality of application of such methods in IBA is emphasised: if RBS and PIXE data are analysed self-consistently then the resulting depth profile inherits the accuracy and depth resolution of RBS and the sensitivity and elemental discrimination of PIXE

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Section: Equationmentioning

confidence: 99%

Accurate Determination of Quantity of Material in Thin Films by Rutherford Backscattering Spectrometry

2012

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“…To determine the D concentration at depths greater than 0.5 µm, an analyzing beam of 3 He ions with energies varied from 0.69 to 2.0 MeV was used [13]. The amount of deposited W atoms was determined by Rutherford backscattering spectrometry (RBS) [14].…”

Section: Diagnostics Of the Deposition Layersmentioning

confidence: 99%

Deuterium trapping in tungsten deposition layers formed by deuterium plasma sputtering

Alimov

Roth

Shu

et al. 2010

Journal of Nuclear Materials

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“…4 The lattice damage induced by implantation was evaluated by Rutherford backscattering/channeling spectrometry (RBS/C). χ min is the channeling minimum yield in RBS/C, which is the ratio of the backscattering yield at channeling condition to that for a random beam incidence [42]. Therefore, χ min indicates the lattice disordering degree upon implantation.…”

Section: Experimental Methodsmentioning

confidence: 99%

Ferromagnetic transition metal implanted ZnO: A diluted magnetic semiconductor?

Zhou

Potzger

et al. 2009

Vacuum

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Recently theoretical works predict that some semiconductors (e.g. ZnO) doped with magnetic ions are diluted magnetic semiconductors (DMS). In DMS magnetic ions substitute cation sites of the host semiconductor and are coupled by free carriers resulting in ferromagnetism. One of the main obstacles in creating DMS materials is the formation of secondary phases because of the solid-solubility limit of magnetic ions in semiconductor host. In our study transition metal ions were implanted into ZnO single crystals with the peak concentrations of 0.5-10 at.%. We established a correlation between structural and magnetic properties. By synchrotron radiation X-ray diffraction (XRD) secondary phases

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Concepts of Backscattering Spectrometry

Cited by 1,081 publications

References 9 publications

Accurate Determination of Quantity of Material in Thin Films by Rutherford Backscattering Spectrometry

Accurate Determination of Quantity of Material in Thin Films by Rutherford Backscattering Spectrometry

Deuterium trapping in tungsten deposition layers formed by deuterium plasma sputtering

Ferromagnetic transition metal implanted ZnO: A diluted magnetic semiconductor?

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