We designed two kinds of flip-chip bonded electro-absorption modulated laser on AlN or Si carrier, working at 100 Gb s
À1. A theoretical comodeling approach based on 3D electromagnetic and circuit simulations has been applied and validated by measurements. As demonstrated, integration and behavior of future complex opto-electronic modules could be optimized applying such EM-based approach. V C 2010 Wiley Periodicals, Inc. Int J RF and Microwave CAE 20:672-681, 2010.