2019
DOI: 10.1016/j.nanoen.2019.03.047
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Concurrent defects of intrinsic tellurium and extrinsic silver in an n-type Bi2Te2.88Se0.15 thermoelectric material

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Cited by 27 publications
(12 citation statements)
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“…Bi 2 Te 3 , an emerging topological insulator layered material, has attracted massive interest because of its glamorous electronic properties. , As a typical topological insulator, Bi 2 Te 3 possesses conductive surface states which could permit dissipationless electric conduction at room temperature, that is, the flow of electrons on its surface is topologically protected against backscattering from defects and impurities, thus being mainly applied in thermoelectric devices. On the other hand, being a layered material, Bi 2 Te 3 simultaneously is a two-dimensional system with high specific surface areas and unprecedented optoelectronic properties that are important for sensing, catalysis, and energy exchange. However, the nanosheets of layered Bi 2 Te 3 commonly stack into three-dimensional crystals through van der Waals interactions.…”
Section: Introductionmentioning
confidence: 99%
“…Bi 2 Te 3 , an emerging topological insulator layered material, has attracted massive interest because of its glamorous electronic properties. , As a typical topological insulator, Bi 2 Te 3 possesses conductive surface states which could permit dissipationless electric conduction at room temperature, that is, the flow of electrons on its surface is topologically protected against backscattering from defects and impurities, thus being mainly applied in thermoelectric devices. On the other hand, being a layered material, Bi 2 Te 3 simultaneously is a two-dimensional system with high specific surface areas and unprecedented optoelectronic properties that are important for sensing, catalysis, and energy exchange. However, the nanosheets of layered Bi 2 Te 3 commonly stack into three-dimensional crystals through van der Waals interactions.…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, reducing the higher carrier concentration from the donor-like effect is also important for shifting the best thermoelectric performance to room temperature. 10,27 Strategies like solution-processed nanostructuring, 28−30 compositional control (such as doping Cu, 31−33 Ag, 34,35 Ge, 36 K 37 ) and mechanical deformation (mostly hot deformation, HD) 15,24,26,27,34,38−42 have been reported to manipulate the carrier concentration and other thermoelectric properties of the n-type Bi 2 Te 3 -based compounds. Various HD processes have been widely developed to optimize the carrier concentration and to reduce κ lat for enhancing the ZT, 15,24,26,27,34,38−43 and a state-of-the-art ZT of ∼1.3 at 450 K in the n-type Bi 2 Te 3−y Se y samples is realized by an HD approach.…”
Section: Introductionmentioning
confidence: 99%
“…Thermoelectric materials with excellent characteristics, including a high Seebeck coefficient, a small electrical resistivity, and a low thermal conductivity, are always desired for enhancing the TEG's performance. Many novel approaches, including utilizing metal nanoparticles [24], nanoporous materials [25], carbon black particles [26], and metal doping [27,28], have been investigated to improve thermoelectric material's properties. Besides the effects of material properties, selecting proper physical dimensions of thermoelectric elements, such as the width and height of thermoelectric elements, could also contribute to better performance of the TEG [28].…”
Section: Thermoelectric Generator Structurementioning
confidence: 99%