Conductance oscillations induced by ballistic snake states in a graphene heterojunction

Taychatanapat, Thiti; Tan, Jun; Yeo, Ye; Watanabe, Kenji; Taniguchi, Takashi; Özyilmaz, Barbaros

doi:10.1038/ncomms7093

Cited by 84 publications

(110 citation statements)

References 36 publications

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“…This optical approach to locally dope high-quality graphene devices has distinct advantages over conventional techniques that make use of local gate electrodes in terms of rewritability and a reduction of the amount of difficult and possibly invasive lithography, etching, and contacting steps. 9,10 Additionally, doping patterns with numerous p-n junctions could be implemented and erased in a single device, opening unprecedented opportunities to study graphene-based electron optic devices, [26][27][28] Veselago lenses, 29 and Klein tunneling phenomena. 30 Moreover, other complex doping profiles which are difficult or impossible to realize with conventional gate electrodes, like isolated, localized doping spots and arrays, can be realized with this technique.…”

mentioning

confidence: 99%

Spatial Control of Laser-Induced Doping Profiles in Graphene on Hexagonal Boron Nitride

Neumann

Rizzi

Reichardt

et al. 2016

ACS Appl. Mater. Interfaces

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We present a method to create and erase spatially resolved doping profiles in graphenehexagonal boron nitride (hBN) heterostructures. The technique is based on photo-induced doping by a focused laser and does neither require masks nor photo resists. This makes our technique interesting for rapid prototyping of unconventional electronic device schemes, where the spatial resolution of the rewritable, long-term stable doping profiles is only limited by the

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mentioning

confidence: 99%

Spatial Control of Laser-Induced Doping Profiles in Graphene on Hexagonal Boron Nitride

Neumann

Rizzi

Reichardt

et al. 2016

ACS Appl. Mater. Interfaces

Self Cite

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“…This interpretation helps one to understand: (i) directionality of the states and (ii) localization in regions where B s ≈ 0 and changes sign. However, despite the usefulness of the semiclassical perspective, it is important to retain that no clear correspondence to the classical motion can be established in the case shown in Figure 4d because, as we are looking at energies between the n = 0 and n = 1 LL, the cyclotron radius is smaller than the magnetic length for the energies studied: 32,33 these modes are in the quantum regime.…”

Section: Perfectly Conducting Channels and Valley Filteringmentioning

confidence: 99%

Quantized Transport, Strain-Induced Perfectly Conducting Modes, and Valley Filtering on Shape-Optimized Graphene Corbino Devices

et al. 2017

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The extreme mechanical resilience of graphene 1,2 and the peculiar coupling it hosts between lattice and electronic degrees of freedom 3-5 have spawned a strong impetus towards strain-engineered graphene where, on the one hand, strain augments the richness of its phenomenology and makes possible new concepts for electronic devices 6,7 and, on the other hand, new and extreme physics might take place. 8-15Here, we demonstrate that the shape of substrates supporting graphene sheets can be optimized for approachable experiments where strain-induced pseudomagnetic fields (PMF) can be tailored by pressure for directionally selective electronic transmission and pinching-off of current flow down to the quantum channel limit. The Corbino-type layout explored here furthermore allows filtering of charge carriers according to valley and current direction, which can be used to inject or collect valley-polarized currents, thus realizing one of the basic elements required for valleytronics. Our results are based on a framework developed to realistically determine the combination of strain, external parameters, and geometry optimally compatible with the target spatial profile of a desired physical property -the PMF in this case. Characteristic conductance profiles are analyzed through quantum transport calculations on large graphene devices having the optimal shape. † This work has been published

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“…It was shown that the presence of the local gate leads to the appearance of electron-hole (e-h) puddles along the p-n interface [8,[18][19][20]. Up to now, the only way to observe these scatterers was by using different scanning techniques [18,19].…”

Section: Introductionmentioning

confidence: 99%

“…Owing to the zero energy gap and the relativistic nature of the carriers graphene p-n junctions exhibit new and exciting physical features, unobserved in semiconducting electronics, e.g. Klein tunnelling [3,4], valley-valve effect [5], and snake states [6][7][8][9], to name a few. Recently, encapsulating graphene in h-BN [10][11][12][13] has become a popular technique for the realization of high-quality graphene devices.…”

Section: Introductionmentioning

confidence: 99%

Characterization of the size and position of electron–hole puddles at a graphene p–n junction

Milovanović¹,

Peeters²

2016

Nanotechnology

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The effect of an electron-hole puddle on the electrical transport when governed by snake states in a bipolar graphene structure is investigated. Using numerical simulations we show that information on the size and position of the electron-hole puddle can be obtained using the dependence of the conductance on magnetic field and electron density of the gated region. The presence of the scatterer disrupts snake state transport which alters the conduction pattern. We obtain a simple analytical formula that connects the position of the electron-hole puddle with features observed in the conductance. Size of the electron-hole puddle is estimated from the magnetic field and gate potential that maximizes the effect of the puddle on the electrical transport.

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Conductance oscillations induced by ballistic snake states in a graphene heterojunction

Cited by 84 publications

References 36 publications

Spatial Control of Laser-Induced Doping Profiles in Graphene on Hexagonal Boron Nitride

Spatial Control of Laser-Induced Doping Profiles in Graphene on Hexagonal Boron Nitride

Quantized Transport, Strain-Induced Perfectly Conducting Modes, and Valley Filtering on Shape-Optimized Graphene Corbino Devices

Characterization of the size and position of electron–hole puddles at a graphene p–n junction

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