Conductance Quantization Behavior in Pt/SiN/TaN RRAM Device for Multilevel Cell

Park, Jong-Min; Lee, Seung-Wook; Lee, Kisong; Kim, Sungjun

doi:10.3390/met11121918

Cited by 6 publications

(7 citation statements)

References 36 publications

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“…This indicates the electron transport mechanism could be Schottky emission in HRS. Moreover, similar characteristics are observed at a higher temperatures from 30 °C to 90 °C [ 35 , 36 , 37 , 38 ].…”

Section: Resultssupporting

confidence: 67%

“…In Figure 2 d,

vs.

indicates that the electron transport mechanism follows ohmic conduction in LRS. This proves that the current flows through the strong conducting filament formed by defects in the insulator layer [ 34 , 35 , 36 ]. As shown in Figure 2 e, the linear fitting of

vs.

is well matched with measured I-V curves in HRS.…”

Section: Resultsmentioning

confidence: 94%

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Resistive Switching Characteristics of Alloyed AlSiOx Insulator for Neuromorphic Devices

et al. 2022

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Charge-based memories, such as NAND flash and dynamic random-access memory (DRAM), have reached scaling limits and various next-generation memories are being studied to overcome their issues. Resistive random-access memory (RRAM) has advantages in structural scalability and long retention characteristics, and thus has been studied as a next-generation memory application and neuromorphic system area. In this paper, AlSiOx, which was used as an alloyed insulator, was used to secure stable switching. We demonstrate synaptic characteristics, as well as the basic resistive switching characteristics with multi-level cells (MLC) by applying the DC sweep and pulses. Conduction mechanism analysis for resistive switching characteristics was conducted to understand the resistive switching properties of the device. MLC, retention, and endurance are evaluated and potentiation/depression curves are mimicked for a neuromorphic device.

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Section: Resultssupporting

confidence: 67%

“…In Figure 2 d,

vs.

is well matched with measured I-V curves in HRS.…”

Section: Resultsmentioning

confidence: 94%

Resistive Switching Characteristics of Alloyed AlSiOx Insulator for Neuromorphic Devices

et al. 2022

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“…The property of conductance quantization [ 49 – 52 ] was confirmed. This is thought to be due to the quantization effect of conductive filament during the reset process.…”

Section: Resultsmentioning

confidence: 95%

Multi-level Cells and Quantized Conductance Characteristics of Al2O3-Based RRAM Device for Neuromorphic System

et al. 2022

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Recently, various resistance-based memory devices are being studied to replace charge-based memory devices to satisfy high-performance memory requirements. Resistance random access memory (RRAM) shows superior performances such as fast switching speed, structural scalability, and long retention. This work presented the different filament control by the DC voltages and verified its characteristics as a synaptic device by pulse measurement. Firstly, two current–voltage (I–V) curves are characterized by controlling a range of DC voltages. The retention and endurance for each different I–V curve were measured to prove the reliability of the RRAM device. The detailed voltage manipulation confirmed the characteristics of multi-level cell (MLC) and conductance quantization. Lastly, synaptic functions such as potentiation and depression, paired-pulse depression, excitatory post-synaptic current, and spike-timing-dependent plasticity were verified. Collectively, we concluded that Pt/Al2O3/TaN is appropriate for the neuromorphic device.

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“…Furthermore, reducing the conductive filaments to the atomic scale of quantum point contact permits memristive ballistic electron transport in analog domains without scattering and quantized conductance characteristics [ 42 – 44 ]. It not only dramatically enhances the data storage capability of gadgets, but it also allows neuromorphic systems to analyze information more efficiently.…”

Section: Introductionmentioning

confidence: 99%

Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering

et al. 2022

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For neuromorphic computing and high-density data storage memory, memristive devices have recently gained a lot of interest. So far, memristive devices have suffered from switching parameter instability, such as distortions in resistance values of low- and high-resistance states (LRSs and HRSs), dispersion in working voltage (set and reset voltages), and a small ratio of high and low resistance, among other issues. In this context, interface engineering is a critical technique for addressing the variation issues that obstruct the use of memristive devices. Herein, we engineered a high band gap, low Gibbs free energy Al2O3 interlayer between the HfO2 switching layer and the tantalum oxy-nitride electrode (TaN) bottom electrode to operate as an oxygen reservoir, increasing the resistance ratio between HRS and LRS and enabling multilayer data storage. The Pt/HfO2/Al2O3/TaN memristive device demonstrates analog bipolar resistive switching behavior with a potential ratio of HRS and LRS of > 105 and the ability to store multi-level data with consistent retention and uniformity. On set and reset voltages, statistical analysis is used; the mean values (µ) of set and reset voltages are determined to be − 2.7 V and + 1.9 V, respectively. There is a repeatable durability over DC 1000 cycles, 105 AC cycles, and a retention time of 104 s at room temperature. Quantum conductance was obtained by increasing the reset voltage with step of 0.005 V with delay time of 0.1 s. Memristive device has also displayed synaptic properties like as potentiation/depression and paired-pulse facilitation (PPF). Results show that engineering of interlayer is an effective approach to improve the uniformity, ratio of high and low resistance, and multiple conductance quantization states and paves the way for research into neuromorphic synapses.

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Conductance Quantization Behavior in Pt/SiN/TaN RRAM Device for Multilevel Cell

Cited by 6 publications

References 36 publications

Resistive Switching Characteristics of Alloyed AlSiOx Insulator for Neuromorphic Devices

Resistive Switching Characteristics of Alloyed AlSiOx Insulator for Neuromorphic Devices

Multi-level Cells and Quantized Conductance Characteristics of Al2O3-Based RRAM Device for Neuromorphic System

Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering

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