Conducted growth of SrRuO3 nanodot arrays on self-ordered La0.18Sr0.82Al0.59Ta0.41O3(001) surfaces

Bachelet, Romain; Ocal, Carmen; Garzón, Luis; Fontcuberta, J.; Sánchez, F.

doi:10.1063/1.3622140

Cited by 12 publications

(17 citation statements)

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“…Atomic surface diffusion reveals both chemical terminations by selfassembly with well-defined terraces separated by half-uc high steps and terraces of ∼150 nm wide depending of the miscut angle and the termination ratio in as-received substrates. This has been observed on SrTiO 3 [56], on LaAlO 3 [57], on DyScO 3 [52], and on LSAT [11]. Surface potential differences between both terminations in SrTiO 3 have been predicted to be around 2.3 eV but measured with lower value [32].…”

Section: Surface Chemistry: Atomic Terminationsmentioning

confidence: 80%

“…Taking advantage of the termination-dependent chemical or energy properties (hydrophilic SrO termination in SrTiO 3 for instance), a selective growth and adsorption of different materials such as SrRuO 3 , water, and organic tioles has been shown [29,56,58]. Ordered 1D nanostructures such as arrays of conducting SrRuO 3 nanostripes (of the single-terminated terrace width) or nanodots (∼70 nm wide and ∼4 nm high) have then been realized in such a way on LaAlO 3 [59], SrTiO 3 [53,60], on DyScO 3 [52,61], and on LSAT [11]. In the case of low energy interface, 2D epitaxial growth can occur without preferential nucleation with the chemical terminations replicating themselves at the film surface (see Figure 2A).…”

Section: Surface Chemistry: Atomic Terminationsmentioning

confidence: 99%

“…The 3D island growth relieved by epitaxial strain is scarcely observed in oxides in comparison to metals or semiconductors, such as the archetype case of Si 1−x Ge x growth on Si (001) surface [9,10], probably because of the larger elastic constants in oxides compared to Si and III-V semiconductors (at least by a factor of two). The strainrelieved formation of 3D oxide epitaxial islands has been observed only very low-nanoscale islands (lower than ∼100 nm in diameter and a few nanometers in height) [7,11,12]. The formation of other nanostructures should be explained by more complex mechanisms taking into account all the above mentioned parameters, the structural anisotropy (driving diffusion anisotropy), the chemical ordering and stoechiometry, surface polarity, and the balance between thermodynamics and kinetic driven by diffusion to flux ratio (D/F) during growth [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

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Oxide Single-Crystal Surfaces: A Playground for Self-assembled Oxide Nanostructures

Bachelet

2016

Front. Phys.

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The different (structural and chemical) properties of oxide single-crystal surfaces that can be exploited for the growth of self-assembled oxide nanostructures are briefly reviewed. A large variety of nanostructures can be obtained, controlled by surface and interface structure and chemistry, which play a predominant role in their formation mechanisms at this nanometer scale. It is reminded that surface atomic order, surface steps, chemical terminations or heteroepitaxial strain can be used to generate various nanostructures such as nanodots, nanowires, nanostripes, with controlled size, morphology, and spatial ordering.

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Section: Surface Chemistry: Atomic Terminationsmentioning

confidence: 80%

Section: Surface Chemistry: Atomic Terminationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Oxide Single-Crystal Surfaces: A Playground for Self-assembled Oxide Nanostructures

Bachelet

2016

Front. Phys.

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“…[58,74,76] Moreover, SrRuO 3 nanostructures are reported to be created on various substrates, such as, LaAlO 3 [75] and LSAT [77] . In Fig.…”

Section: Termination Selective Growth Other Substratesmentioning

confidence: 99%

“…4.1(c). Observations of SrRuO 3 self-organization during growth are reported on SrTiO 3 [73,74,76] , LaAlO 3 [75] and LSAT [77] . Initially, the growth of these ordered morphologies on SrTiO 3 substrates was attributed to the substrate step edges.…”

Section: Introductionmentioning

confidence: 99%

Size effects in epitaxial oxide thin films

Kuiper

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Cover Three dimensional impression of the formation of epitaxial nanowires on an ordered mixed terminated crystal surface. The light gray blocks at the bottom represent the different areas of surface mixed termination, e.g., DyO and ScO 2 in the case of DyScO 3 . The dark blocks represent complete perovskite blocks of deposited film material, e.g., SrRuO 3 . This type of nanowire formation is described in chapters three, four and five of this thesis. The picture is generated using POVRay software and is based on actual Monte Carlo simulation results.The research described in this thesis was carried out within the Inorganic Materials Science group, Department of Science and Technology and the MESA+ institute for Nanotechnology at the University of Twente. This work is financially supported by The Netherlands Organization for Scientific Research (NWO). Nanopatterned epitaxial oxide thin films IntroductionFabricating ever smaller devices which show ever more functionality is at the heart of modern day technological development in the field of electronics. This quest for smaller and more advanced electronics, requires the fabrication of components and structures with length-scales now reaching only several nanometers (a billionth of a meter). Material properties at the nanometer scale can be very different compared to their bulk counterparts. Volume to surface area ratios change and classical laws of physics cannot always be applied; quantum effects start to play a role. A famous quote from world-renowned physicist Feynman is often referred to in this regard:"There is plenty of room at the bottom."Richard Feynman, December 1959 [1] Although popular magazines discourage the use of this quote as introduction in scientific publications [2] along with Moore's law, it perfectly summarizes the motivation for much of the research done in the field of nanotechnology in the past years and nicely fits the work done in this thesis. While intrinsic (bulk) material properties may be lost or altered by size or quantum effects, new phenomena and properties can emerge, e.g., giant magnetoresistance, which is now commonly used in hard disk drives and sensor applications. [3,4] The fabrication process of these small structures or thin films is usually different compared to conventional patterning techniques. New fabrication processes must be developed in order to create functional patterns at the nanometer scale and characterization techniques, like electron microscopy, should be improved to allow for analyzing the resulting structures and properties. In this respect, the fundamental material properties, the fabrication process and characterization methods are coupled and all require a great amount of study.An interesting group of materials for both device fabrication and fundamental materials studies is the family of metal oxides. Within this group, the per-1 2 Nanopatterned epitaxial oxide thin films ovskite family contains a range of materials which all share a common oxygen backbone, with a multitude of different properties, e.g....

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