Conducting properties of In2O3:Sn thin films at low temperatures

Кытин, В. Г.; Kulbachinskii, V. A.; Reukova, O. V.; Galperin, Y. M.; Johansen, T. H.; Diplas, Spyros; Ulyashin, A.

doi:10.1007/s00339-013-7799-8

Cited by 17 publications

(13 citation statements)

References 23 publications

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“…We do not cover insulating or amorphous ITO materials in this Topical Review, where the electronic conduction processes can be due to thermally excited hopping [58][59][60][61][62].…”

Section: Introductionmentioning

confidence: 99%

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Lin

2014

J. Phys.: Condens. Matter

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Abstract.Indium tin oxide (Sn-doped In 2 O 3−δ or ITO) is an interesting and technologically important transparent conducting oxide. This class of material has been extensively investigated for decades, with research efforts focusing on the application aspects. The fundamental issues of the electronic conduction properties of ITO from 300 K down to low temperatures have rarely been addressed. Studies of the electricaltransport properties over a wide range of temperature are essential to unraveling the underlying electronic dynamics and microscopic electronic parameters. In this Topical Review, we show that one can learn rich physics in ITO material, including the semiclassical Boltzmann transport, the quantum-interference electron transport, and the electron-electron interaction effects in the presence of disorder and granularity. To reveal the avenues and opportunities that the ITO material provides for fundamental research, we demonstrate a variety of charge transport properties in different forms of ITO structures, including homogeneous polycrystalline films, homogeneous singlecrystalline nanowires, and inhomogeneous ultrathin films. We not only address new physics phenomena that arise in ITO but also illustrate the versatility of the stable ITO material forms for potential applications. We emphasize that, microscopically, the rich electronic conduction properties of ITO originate from the inherited freeelectron-like energy bandstructure and low-carrier concentration (as compared with that in typical metals) characteristics of this class of material. Furthermore, a low carrier concentration leads to slow electron-phonon relaxation, which causes (i) a small residual resistance ratio, (ii) a linear electron diffusion thermoelectric power in a wide temperature range 1-300 K, and (iii) a weak electron dephasing rate. We focus our discussion on the metallic-like ITO material.

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“…We do not cover insulating or amorphous ITO materials in this Topical Review, where the electronic conduction processes can be due to thermally excited hopping [58][59][60][61][62].…”

Section: Introductionmentioning

confidence: 99%

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Lin

2014

J. Phys.: Condens. Matter

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“…The approximation parameter (L u ¼ 320 nm) for film ITO 230 is consistent with the value (L u ¼ 360 nm) obtained in Ref. 19, where the magnetoresistance of an ITO230 film was analyzed using an asymptotic expression for the quantum correction to the conductivity for quasi-2D systems. 23 Figure 10 shows the temperature dependence of the magnetoconductivity of films GaR2 (a) and GaY2 (b) and approximations to these using Eq.…”

Section: Weak Localization Of Electrons In Zno and Ito Films With Banmentioning

confidence: 87%

“…18 X-ray diffraction and electron microscopy data show that tin-doped indium oxide and aluminum-doped zinc oxide films synthesized by magnetron sputtering of oxide targets consist of large crystallites stretched in a direction perpendicular to the substrate plane. 19 The crystallites are larger in the ITO films deposited at 230 C than in those deposited at room temperature.…”

Section: Samples and Experimental Techniquesmentioning

confidence: 99%

Electron transport and low-temperature electrical and galvanomagnetic properties of zinc oxide and indium oxide films

Kulbachinskii

Кытин

Reukova

et al. 2015

Low Temperature Physics

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The electrical and galvanomagnetic properties of zinc oxide films with and without gallium, aluminum, and cobalt doping and of tin-doped indium oxide films are studied over a wide range of temperatures and magnetic fields. It is shown that the mechanism for electron transport in these films changes from band to hopping transport as the degree of crystallinity of the films is reduced because of the methods and conditions for their synthesis. The change in the dimensionality of the films with band electron transport at low temperatures is studied in terms of the weak localization induced by a magnetic field. The localization radius and density of electron states in the Fermi level are estimated for the films with a hopping electron transport.

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“…ITO exhibits a very low R s (b 200 Ω/sq) and high T (N80%) when it is conventionally deposited on glass substrates with substrate heating (N200°C) [10][11][12]. As a result, it has been the most widely used TCE material in nearly all rigid optoelectronics for several decades [9][10][11][12][13]. With the recent growing interest in flexible electronics, ITO films are now also being deposited on flexible polymer substrates such as polycarbonate (PC) and polyethyleneterephthalate (PET), and their electrical properties, optical properties and flexibility have been investigated [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

“…Tin-doped indium oxide (Sn-doped In 2 O 3 , ITO) is a degenerated ntype semiconductor with a wide band gap [9]. ITO exhibits a very low R s (b 200 Ω/sq) and high T (N80%) when it is conventionally deposited on glass substrates with substrate heating (N200°C) [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Tin-doped indium oxide films for highly flexible transparent conducting electrodes

et al. 2016

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Conducting properties of In2O3:Sn thin films at low temperatures

Cited by 17 publications

References 23 publications

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Electron transport and low-temperature electrical and galvanomagnetic properties of zinc oxide and indium oxide films

Tin-doped indium oxide films for highly flexible transparent conducting electrodes

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