Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3

Polyakov, A. Y.; Vasilev, A. A.; Shchemerov, Ivan; Черных, А. В.; Shetinin, Igor; Zhevnerov, E.V.; Kochkova, А. I.; Лагов, П. Б.; Miakonkikh, Andrey V.; Pavlov, Yu. S.; Kobets, U. A.; Lee, In−Hwan; Kuznetsov, A. Yu.; Pearton, S. J.

doi:10.1016/j.jallcom.2023.169258

Cited by 9 publications

(4 citation statements)

References 24 publications

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“…The sample was studied after two sets of treatments. In the first, it was implanted with 10 16 cm −2 1 MeV O ions, characterized, subjected to H plasma treatment and again characterized [67]. In the second set, the sample was further implanted with O ions to a total fluence of 4 × 10 16 cm −2 , characterized and subjected to H plasma treatment, with detailed electrical characterization and deep trap spectra measurements after the second O implantation and after H plasma treatment.…”

Section: Samples Usedmentioning

confidence: 99%

“…All hydrogen plasma treatments were performed in an inductively coupled plasma (ICP) reactor (PlasmaLab 100 dual, Oxford Instruments Technology, Oxford, UK) at 330 • C for 30 min, at a pressure of 36 mTorr. The ICP RF power was 1500 W, the RF power applied to the chuck was 75 W and the bias on the chuck was 298 V. This regime was found to be effective in inducing measurable changes in the electrical properties of bulk n-type β-Ga 2 O 3 [47,67,69] and was adopted as basal for the treatment of all samples described in this paper.…”

Section: Hydrogen Plasma Treatmentmentioning

confidence: 99%

“…In this experiment, we first tried performing 1 MeV oxygen implantation with a high fluence of 10 16 cm −2 that created the bulk Ga vacancy concentration in the peak located near 1.2 µm (with the full range of O ions of 1.4 µm) of about 10 19 cm −3 and the bulk vacancy concentration over 10 20 cm −3 in the peak [67]. The sample had a net donor density of 10 16 cm −3 .…”

Section: Recent Experiments With Hydrogen Plasma Treatment Of β-Ga2o3mentioning

confidence: 99%

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Impact of Hydrogen Plasma on Electrical Properties and Deep Trap Spectra in Ga2O3 Polymorphs

Polyakov,

Yakimov,

Nikolaev

et al. 2023

Crystals

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In this study, the results of hydrogen plasma treatments of β-Ga2O3, α-Ga2O3, κ-Ga2O3 and γ-Ga2O3 polymorphs are analyzed. For all polymorphs, the results strongly suggest an interplay between donor-like hydrogen configurations and acceptor complexes formed by hydrogen with gallium vacancies. A strong anisotropy of hydrogen plasma effects in the most thermodynamically stable β-Ga2O3 are explained by its low-symmetry monoclinic crystal structure. For the metastable, α-, κ- and γ-polymorphs, it is shown that the net result of hydrogenation is often a strong increase in the density of centers supplying electrons in the near-surface regions. These centers are responsible for prominent, persistent photocapacitance and photocurrent effects.

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Section: Samples Usedmentioning

confidence: 99%

Section: Hydrogen Plasma Treatmentmentioning

confidence: 99%

Section: Recent Experiments With Hydrogen Plasma Treatment Of β-Ga2o3mentioning

confidence: 99%

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Impact of Hydrogen Plasma on Electrical Properties and Deep Trap Spectra in Ga2O3 Polymorphs

Polyakov,

Yakimov,

Nikolaev

et al. 2023

Crystals

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“…Although a few papers on the defect structures created in β-Ga2O3 bombarded with heavy ions could be found in the literature, these reports are not fully consistent [20][21][22][23][24][25][26]. This is mostly because the radiation-induced defect accumulation process in β-Ga2O3, as well as the types of created defects, seem to depend strongly on many factors like quality, and manufacturing method of the target material, implantation conditions as well as the physicochemical properties of the dopant ions implanted into the crystal lattice [27][28][29][30][31][32].…”

Section: Introductionmentioning

confidence: 95%

Anisotropy of radiation-induced defects in Yb-implanted β-Ga2O3

Ratajczak,

Sarwar,

Kalita

et al. 2024

Preprint

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RE-doped β-Ga2O3 seems attractive for future high-power LEDs operating in high irradiation environments. In this work, we pay special attention to the issue of radiation-induced defect anisotropy in β-Ga2O3, which is crucial for device manufacturing. Using the RBS/c technique, we have carefully studied the structural changes caused by implantation and post-implantation annealing in two of the most commonly used crystallographic orientations of β-Ga2O3, namely the (-201) and (010). The analysis was supported by advanced computer simulations using the McChasy code. Our studies reveal a strong dependence of the structural damage induced by Yb-ion implantation on the crystal orientation, with a significantly higher level of extended defects observed in the (-201) direction than for the (010). In contrast, the concentration and behavior of simple defects seem similar for both oriented crystals, although their evolution suggests the coexistence of two different types of defects in the implanted zone with their different sensitivity to both, radiation and annealing. It has also been found that Yb ions mostly occupy the interstitial positions in β-Ga2O3 crystals that remain unchanged after annealing. The location is independent of the crystal orientations. We believe that these studies noticeably extend the knowledge of the radiation-induced defect structure, because they dispel doubts about the differences in the damage level depending on crystal orientation, and are important for further practical applications.

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Properties of κ‐Ga₂O₃ Prepared by Epitaxial Lateral Overgrowth

Polyakov,

Lee,

Nikolaev

et al. 2023

Adv Materials Inter

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The structural and electrical properties of undoped and Sn doped κ‐Ga2O3 layers grown by epitaxial lateral overgrowth on TiO2/sapphire substrates using stripe and point masks show that the crystalline structure of the films can be greatly improved relative to conventional planar growth. The undoped films are semi‐insulating, with the Fermi level pinned near EC‐0.7 eV, and deep electron traps at EC‐0.5 eV and EC‐0.3 eV are detectable in thermally stimulated current and photoinduced current transient spectra measurements. Low concentration Sn doping results in net donor concentrations of ≈ 1013 cm−3, and deep trap spectra determined by electron traps at EC‐0.5 eV, and deep acceptors with an optical ionization threshold near 2 and 3.1 eV. Treatment of the samples in hydrogen plasma at 330 °C increases the donor density near the surface to ≈ 1019 cm−3. Such samples show strong persistent photocapacitance and photoconductivity, indicating the possible DX‐like character of the centers involved. For thin (5 µm) κ‐Ga2O3 films grown on GaN/sapphire templates, p‐type‐like behavior is unexpectedly observed in electrical properties and we discuss the possible formation of a 2D hole gas at the κ‐Ga2O3/GaN interface.

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Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3

Cited by 9 publications

References 24 publications

Impact of Hydrogen Plasma on Electrical Properties and Deep Trap Spectra in Ga2O3 Polymorphs

Impact of Hydrogen Plasma on Electrical Properties and Deep Trap Spectra in Ga2O3 Polymorphs

Anisotropy of radiation-induced defects in Yb-implanted β-Ga2O3

Properties of κ‐Ga₂O₃ Prepared by Epitaxial Lateral Overgrowth

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Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3

Cited by 9 publications

References 24 publications

Impact of Hydrogen Plasma on Electrical Properties and Deep Trap Spectra in Ga2O3 Polymorphs

Impact of Hydrogen Plasma on Electrical Properties and Deep Trap Spectra in Ga2O3 Polymorphs

Anisotropy of radiation-induced defects in Yb-implanted β-Ga2O3

Properties of κ‐Ga2O3 Prepared by Epitaxial Lateral Overgrowth

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Product

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Properties of κ‐Ga₂O₃ Prepared by Epitaxial Lateral Overgrowth