Conduction and switching in InxSe1−x

Abstract

The electrical properties of bulk InxSe1–x prepared by quenching from the melt is investigated. It is found that this system exhibits non‐linear I‐U characteristics and switching phenomena. Resistivity and regime of switching for both, amorphous and polycrystalline phases depend on the Se content. The threshold voltage decreases with increasing the ambient temperature, and shows a complex behaviour with Se concentration. X‐ray examination for annealed samples shows phase separation of crystalline Se, InSe, or In2Se2 depending on the original composition. The switching phenomena are discussed on the basis of thermally induced transformations. It is suggested that the existence of a low‐resistivity state may be attributed to the formation of filaments of crystalline phases acting as conduction paths between the two electrodes.