Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance–voltage profiling and deep-level transient spectroscopy techniques

Lu, Lingyun; Wang, Jiannong; Wang, Yuqi; Ge, Weikun; Yang, Gaowen; Wang, Zhanguo

doi:10.1063/1.366942

Cited by 15 publications

(7 citation statements)

References 12 publications

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“…Samples of larger x reported recently [27,[76][77][78] give a mean band-offset ratio of DE c : DE v ¼ 60 : 40 (0.6 < x 0.98). Samples of larger x reported recently [27,[76][77][78] give a mean band-offset ratio of DE c : DE v ¼ 60 : 40 (0.6 < x 0.98).…”

Section: (D) Gainas/gaasmentioning

confidence: 92%

Heterojunction Band Offsets and Schottky Barrier Height

Adachi

2009

Properties of Semiconductor Alloys

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One of the most important parameters for the design and analysis of heterojunction and QW electronic and optoelectronic devices is the heterojunction band offset. The band offset is a consequence of the difference between the band-gap energies of two semiconductors. As shown in Figure 9.1, the energy difference is distributed between a CB offset DE c and a VB offset DE v . In a type I (straddling lineup), we obtainwhile for type II (broken-gap and staggered lineups) the relationship is given bywhere DE g ¼ jE g1 À E g2 j is the band-gap energy difference.Since the temperature variations of the band-gap energies are very similar among various semiconductors [1], the band offsets and offset ratio can usually be assumed to be independent of temperature. Group-IV Semiconductor Heterostructure System (a) CSi/SiThe C x Si 1Àx /Si heterostructure shows a biaxial tensile strain in the alloy layer. The biaxial strain or stress in the coherently strained QW layers splits the LH and HH bands so that the LH band is highest in C x Si 1Àx layer. Similarly, for C x Si 1Àx layers with smaller x compositions, the lowest CB is at the X (D) band. Brunner et al.[2] measured near-band-edge emission from pseudomorphic C x Si 1Àx /Si QW structures with x up to $2 at%. They found a linear decrease in the PL emission peak with increasing x, which is about 30% larger than the expected band-gap reduction induced by strain. This might indicate that incorporation of C reduces the intrinsic band-gap energy. The trend for decreasing C x Si 1Àx band-gap energy was also proposed by detailed binding calculations [3].The band-offset values for C x Si 1Àx /Si heterostructure have been determined experimentally by several authors [4,5]. Houghton et al.[4] confirmed a type-I alignment in C x Si 1Àx /Si with x ¼ 0.5 À 1.7 at% and also observed an elastic-strain-induced transition from type I to type II in Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors Sadao AdachiC x Si 1Àx /Si QWs. The band-offset ratio obtained by these authors is DE c : DE v ¼ 65 : 35 with E g (Si) ! E g (C x Si 1Àx ). Williams et al. [5] also obtained a band-offset ratio of about 70 : 30 for x ¼ 0.5 À 1.7 at%. The corresponding band lineup is shown schematically in Figure 9.2(a). An ab initio calculation confirms the offset ratio of 70 : 30 [6]. (b) SiGe/SiPrevious studies on the band alignment of the Si x Ge 1Àx /Si heterostructure suggest type-I [7,8] or type-II behavior [9-12]. By employing a wafer bending technique, Thewalt et al. [11] observed both type-I and type-II behaviors respectively, in PL of an UHV-CVD-grown Si 0.7 Ge 0.3 /Si(100) QW at high and low laser powers. They concluded that a determination of type-I alignment [7,8] is a result of the band-bending effects due to high excitation. More recently, Cheng et al. [12] made PL measurements on UHV-CVD-grown and MBE-grown Si x Ge 1Àx /Si MQWs and concluded that the band alignment was type II with DE c ¼ 0.3DE g and DE v ¼ 1.3DE g , as shown in Figure 9.2(b). (c) CSiGe/Si Patel et al. [18] o...

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Section: (D) Gainas/gaasmentioning

confidence: 92%

Heterojunction Band Offsets and Schottky Barrier Height

Adachi

2009

Properties of Semiconductor Alloys

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“…For an indium content x = 0.2, the conduction band mismatch between pure GaAs and In x Ga 1−x As is experimentally determined [24] to be 0.23eV. In Fig.…”

Section: A [010] Grown Waveguidementioning

confidence: 99%

Wave-like transmission in waveguides with spatially modulated strengths of the Rashba and Dresselhaus terms of the spin–orbit interaction

Krstajić¹,

Vasilopoulos²

2010

Physica E: Low-dimensional Systems and Nanostructures

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“…In this way, we can determine the distribution of carriers, band offsets, 1,2) density of states 3) and other electronic and structural parameters 4,5) of the semiconductor heterostructures. Capacitance is a concept originally introduced in classical electrostatics.…”

Section: Introductionmentioning

confidence: 99%

Effects of Doping Profile on Characteristics of InAs Quantum Dots

Park

Kim

et al. 2002

Jpn. J. Appl. Phys.

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Capacitance-voltage measurements were carried out to investigate the effects of the doping profile on characteristics of selfassembled InAs quantum dots. Using this technique, we observed features of zero-dimensional electron confinement indicating the presence of quantum dots. However, the number of confined states differed depending on the doping profile, and this fact was confirmed by photoluminescence measurements. The equation in the depletion approximation led us to calculate the distribution of carriers as a function of depth from the sample surface, and the results are in agreement with the depth of the quantum dot layer.

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Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance–voltage profiling and deep-level transient spectroscopy techniques

Cited by 15 publications

References 12 publications

Heterojunction Band Offsets and Schottky Barrier Height

Heterojunction Band Offsets and Schottky Barrier Height

Wave-like transmission in waveguides with spatially modulated strengths of the Rashba and Dresselhaus terms of the spin–orbit interaction

Effects of Doping Profile on Characteristics of InAs Quantum Dots

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