Conduction behaviour and thermoelectric power of Agx (As0.4Se0.6) 100−x chalcogenide system

Structural and electrical properties of In35Sb45Se20−xTex chalcogenide thin films

“…Chalcogenide material systems such as In-Sb-Se, In-Sb-Te, Ge -Sb-Te, Ag-In-Sb-Te were studied [14][15][16][17][18]. Glass-formation, amorphization range and the information recording conditions for the amorphous layers of In-Sb-Se system (Sb-Se and Sb 2 Se 3 -InSb section) and the conditions of optical information recording on amorphous layers of (Sb 2 Se 3 ) x (InSb) 1-x were studied [19].…”