Conduction mechanism and impedance analysis of HfO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si20.svg" display="inline" id="d1e505"><mml:msub><mml:mrow/><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>-based RRAM at different resistive states

Bai, Jiao; Xie, Weiwei; Zhang, Weiqi; Yin, Zhipeng; Wei, Shengsheng; Qu, Dehao; Li, Yue; Qin, Fuwen; Zhou, Dayu; Wang, Dejun

doi:10.1016/j.apsusc.2022.154084

Cited by 15 publications

(4 citation statements)

References 49 publications

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“…This may be partially due to the increase of the lattice and partially due to the excitation of the charge carriers, which are likely to be present inside the V O defects [40]. Furthermore, both LRS and HRS C P were in the order of 10 -11 F, which showed that C P and their associated resistances represented GB effect [21,22]. Therefore, the undoped devices confirmed the V O conduction-filament model along GBs.…”

Section: Effect Of Y-doping On Is Of Rram Devicesmentioning

confidence: 52%

“…where ρ is resistivity of the sample, A is the surface area of the electrode, d is the thickness of the sample between the electrodes. Further, the conductivity is thermally activated and described by [22] T E kT exp , 7…”

Section: Effect Of Y-doping On Is Of Rram Devicesmentioning

confidence: 99%

“…It is also a powerful tool to probe the microscopic electrical properties during the RS process and separate the contributions from grain interiors (GIs) and grain boundaries (GBs) in HfO x films [21]. Bai et al combined IS with I-V fitting to analyze RS and current conduction mechanism both in high (HRS) and low resistance state (LRS) of HfO x -based RRAM devices [22]. They found that the carrier conduction of the device was mainly determined by the V O and trap defects at GBs.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfO _x -based RRAM devices

Bai

Xie

et al. 2023

Nanotechnology

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Y-doping can effectively improve the performance of HfOx-based resistive random-access memory (RRAM) devices, but the underlying physical mechanism of Y doping affecting the performance of HfOx-based memristors is still missing and unclear. Although impedance spectroscopy (IS) has been widely used to investigate impedance characteristics and switching mechanisms of RRAM devices, there is less IS analysis on Y-doped HfOx-based RRAM devices as well as devices at different temperatures. Here, the effect of Y doping on the switching mechanism of HfOx-based RRAM devices with a Ti/HfOx/Pt structure were reported using current–voltage (I–V) characteristics and IS. The results indicated that doping Y into HfOx films could decrease the forming/operate voltage and improve the RS uniform. Both doped and undoped HfOx-based RRAM devices obeyed the oxygen vacancies (Vo) conductive filament model along the grain boundary (GB). Additionally, the GB resistive activation energy of the Y-doped device was inferior to that of the undoped device. It exhibited a shift of the Vo trap level towards the conduction band bottom after Y doping in the HfOx film, which was the main reason for the improved RS performance.

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Section: Effect Of Y-doping On Is Of Rram Devicesmentioning

confidence: 52%

Section: Effect Of Y-doping On Is Of Rram Devicesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfO _x -based RRAM devices

Bai

Xie

et al. 2023

Nanotechnology

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“…Transition metal oxides (TMOs) are deposited using a variety of processes, including sputtering [19][20][21][22][23][24][25][26]. Recently, nitride-based devices have been studied to create efficient synaptic and memory devices to control accurately conductive paths and metal/semiconductor barriers in these devices [27][28][29].…”

Section: Introductionmentioning

confidence: 99%

Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computing

Pyo,

Jang,

et al. 2023

Materials

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The von Neumann architecture has faced challenges requiring high-fulfillment levels due to the performance gap between its processor and memory. Among the numerous resistive-switching random-access memories, the properties of hexagonal boron nitride (BN) have been extensively reported, but those of amorphous BN have been insufficiently explored for memory applications. Herein, we fabricated a Pt/BN/TiN device utilizing the resistive switching mechanism to achieve synaptic characteristics in a neuromorphic system. The switching mechanism is investigated based on the I–V curves. Utilizing these characteristics, we optimize the potentiation and depression to mimic the biological synapse. In artificial neural networks, high-recognition rates are achieved using linear conductance updates in a memristor device. The short-term memory characteristics are investigated in depression by controlling the conductance level and time interval.

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Reliable Memristive Switching Empowered by Ag/NiO/W ReRAM Configuration for Multi‐Level Non‐Volatile Memory Applications

Chauhan,

Choudhary,

Sharma

2024

Adv Elect Materials

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Resistive random‐access memories (ReRAM) are promising candidates for next‐generation non‐volatile memory, logic components, and bioinspired neuromorphic computing applications. The analog resistive switching (RS) tuning with a sizable memory window is crucial for realizing multi‐level storage devices. This work demonstrates the multi‐level storage capability of fabricated Ag/NiO/W ReRAM architecture, controlled through voltage modulations. The fabricated ReRAM structures exhibit stable bipolar analog RS, non‐overlapping resistance, and endurance of ≈104 cycles, respectively, with marginal statistical variations/fluctuations. Also, the fabricated ReRAM offers highly controlled and stable retention characteristics tested up to ≈104 s with significantly controlled statistical variations/fluctuations. Adjacent thereto, it offers a substantially lower operating SET and RESET voltage of 1 and −1 V, respectively. Moreover, the non‐overlapping multiple resistive states are observed with the voltage pulse modulation schemes. Furthermore, the current switching mechanism is described using a model proposed for the conductive filament growth and the contribution of the NiO/W interface layer (IL) toward notable RS of fabricated Ag/NiO/W structures.

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Conduction mechanism and impedance analysis of HfOx-based RRAM at different resistive states

Cited by 15 publications

References 49 publications

Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfO _x -based RRAM devices

Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfO _x -based RRAM devices

Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computing

Reliable Memristive Switching Empowered by Ag/NiO/W ReRAM Configuration for Multi‐Level Non‐Volatile Memory Applications

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Conduction mechanism and impedance analysis of HfOx-based RRAM at different resistive states

Cited by 15 publications

References 49 publications

Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfO x -based RRAM devices

Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfO x -based RRAM devices

Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computing

Reliable Memristive Switching Empowered by Ag/NiO/W ReRAM Configuration for Multi‐Level Non‐Volatile Memory Applications

Contact Info

Product

Resources

About

Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfO _x -based RRAM devices

Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfO _x -based RRAM devices