2019
DOI: 10.1016/j.mssp.2018.10.008
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Conduction mechanisms in lanthanum manganite nanofibers

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Cited by 43 publications
(26 citation statements)
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“…11(d) shows the variation of "s" with temperature (340-420 °C), demonstrating that "s" is varying inversely with temperature. This observation confirms that correlated barrier hopping (CBH) is the appropriate model to understand charge transport mechanism in these samples [57]. Thus, according to this model, AC conductivity in all the samples is due to the hopping of charge carriers between two sites over the potential barrier separating them, because of thermal activation [58].…”
Section: Fig 9 Experimental Verification Of Nyquist Plot Data With the Depression Angle Forsupporting
confidence: 73%
“…11(d) shows the variation of "s" with temperature (340-420 °C), demonstrating that "s" is varying inversely with temperature. This observation confirms that correlated barrier hopping (CBH) is the appropriate model to understand charge transport mechanism in these samples [57]. Thus, according to this model, AC conductivity in all the samples is due to the hopping of charge carriers between two sites over the potential barrier separating them, because of thermal activation [58].…”
Section: Fig 9 Experimental Verification Of Nyquist Plot Data With the Depression Angle Forsupporting
confidence: 73%
“…This observation conrms that correlated barrier hopping (CBH) is the appropriate model to understand charge transport mechanism in this sample. 51 According to this model, AC conductivity in the sample Ba 5 -CaTi 1.94 Zn 0.06 Nb 8 O 30 is due to the hopping of charge carriers between two sites over the potential barrier separating them, because of thermal activation. 52 Fig .…”
Section: Electrical Conductivity Studymentioning
confidence: 99%
“…The cubic phase of LNO acted as an n-type semiconductor to release electrons, while the nano-crystallinity of the BNMO layer defects acted as a hole-absorbing electron [23][24][25].The Schottky emission mechanism is determined by the linear relationship of Ln(I) versus V 1/2 [26,27]. If the relationship is linear, this is due to the thermionic emission by holes, vacancies and defects [28][29][30][31][32], respectively. The restricted behavior of the interface and the hole trapping behavior are considered to be a case of the Schottky emission mechanism, as expected with linear relationship of Ln(I) versus V 1/2 for the BNMO/LNO/p-Si heterojunction (see the inset of Figure 5b).…”
Section: Resultsmentioning
confidence: 99%