Conduction properties of extended defect states in Dirac materials

Abstract

We demonstrate the existence of localized states in close vicinity of a linear defect in graphene. These states have insulating or conducting character. Insulating states form a flat band, while conducting states present a slowdown of the group velocity which is not originated by many-body interactions and it is controlled by the interface properties. For appropriate boundary conditions, the conducting states exhibit momentum-valley locking and protection from backscattering effects. These findings provide a contribution to the recent discussion on the origin of correlated phases in graphene.

Valley to charge current conversion in graphene grain boundaries

“…These states are localized in close vicinity of the interface and have been proposed as possible nucleation centers of correlated states in graphene. The existence of zeroenergy flat band states with insulating character has also been demonstrated 18 .…”

“…In Ref. 18 it has been demonstrated that localized defect states with conductive character can nucleate in close vicinity of a linear defect of a Dirac material. Such states, under appropriate circumstances, can exhibit protection from back-scattering events due to the momentum-valley locking.…”