Conductive atomic force microscopy study of InGaN films grown by hot-wall epitaxy with a mixed (Ga+In) source

Iwata, Futoshi; Chu, S. N. G.; Sasaki, Akira; Ishino, Kenji; Ishida, Akihiro; Fujiyasu, H.

doi:10.1063/1.373869

Cited by 7 publications

(7 citation statements)

References 20 publications

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“…The main technique used in this work was conductive atomic force microscopy ͑C-AFM͒, 14,15 applied to cross sections of CdTe/ CdS devices. In C-AFM, while a regular contact AFM image is being obtained, a dc potential is applied between the tip and the sample, and the current going from the tip to the sample is measured, also generating a current image.…”

Section: Introductionmentioning

confidence: 99%

Role of Cu on the electrical properties of CdTe∕CdS solar cells: A cross-sectional conductive atomic force microscopy study

Moutinho

Dhere

Jiang

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Section: Introductionmentioning

confidence: 99%

Role of Cu on the electrical properties of CdTe∕CdS solar cells: A cross-sectional conductive atomic force microscopy study

Moutinho

Dhere

Jiang

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…EBSD provides crystallographic orientation maps of the surface and cross sections of materials, pole figures and inverse pole figures, boundary misorientation, and other relevant information about the crystalline structure of the sample. We also analyzed the samples using C-AFM [8,9], which consists of applying a voltage between the tip of an atomic force microscope (AFM) and the sample, and measuring the current going through the sample. The simultaneous topographic and current images allow for correlation between topography and electrical properties.…”

Section: Introductionmentioning

confidence: 99%

Thickness-dependent defect structure of epitaxial silicon thin films deposited by hot-wire chemical vapor deposition

Moutinho

Young

Alberi

et al. 2011

2011 37th IEEE Photovoltaic Specialists Conference

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In this work, we study the defect structure of epitaxial film silicon grown by hot-wire chemical vapor deposition (HWCVD) on Si wafers, as a function of film thickness. We used scanning electron microscopy (SEM) and energydispersive X-ray spectroscopy (EDS) to investigate the distribution, type, and composition of the defects. To investigate the crystallographic structure, we used electron backscattering diffraction (EBSD) on the surface and cross sections of the samples. We observed that, as desired, the films grew epitaxially, and that there was an increase in the density of defects as the film thickness increased.

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“…Therefore, different approaches are necessary to overcome these deficits. One of the most promising techniques is the use of the atomic force microscope (AFM) with conductive tip, which enables current‐sensing measurements with nanometre‐scale spatial resolution (Dai et al ., 1996; Iwata et al ., 2000). Recently, we developed a photoconductive AFM in combination with an optical pumping laser and a current‐sensing AFM in order to study the photoelectric property of a material with nanometre‐scale spatial resolution (Sakaguchi et al ., 1999).…”

Section: Introductionmentioning

confidence: 99%

Photoconductive imaging in a photon scanning tunnelling microscope capable of point‐contact current sensing using a conductive fibre probe

Iwata

Someya

Sakaguchi

et al. 2001

Journal of Microscopy

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SummaryA photoconductive photon scanning tunnelling microscope was developed to investigate the point-contact photoconductive properties of condensed matter. In order to detect the current and the optical signal at a local point on a surface, we coated the edge of a bent type fibre probe with indium tin oxide. Thus it was possible to measure both photocurrent and optical property with subwavelength resolution. The performance of the novel microscope was evaluated by analysing an organic thin film of copper phthalocyanine (CuPc), which is known to be an efficient photoconductive material. Photocurrent and current± voltage characteristics were observed at the local point on the CuPc thin films. Furthermore, photoconductive images were obtained with topography and near-field optical imaging using this system. The photoconductive PSTM shows potential in various areas of future optics and electronics.

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Conductive atomic force microscopy study of InGaN films grown by hot-wall epitaxy with a mixed (Ga+In) source

Abstract: Articles you may be interested inMorphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images

Cited by 7 publications

References 20 publications

Role of Cu on the electrical properties of CdTe∕CdS solar cells: A cross-sectional conductive atomic force microscopy study

Role of Cu on the electrical properties of CdTe∕CdS solar cells: A cross-sectional conductive atomic force microscopy study

Thickness-dependent defect structure of epitaxial silicon thin films deposited by hot-wire chemical vapor deposition

Photoconductive imaging in a photon scanning tunnelling microscope capable of point‐contact current sensing using a conductive fibre probe

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