Conductive Carbon as a Novel Front-End Electrode Material for a Trench DRAM

Böscke, T. S.; Altamirano-Guerrero, Gerardo; Liebau, M.; Uppal, S.; Lee, Yu Pi; Pethe, W.; Patz, Matthias; Kleye, Alexander; Su, Peng; Orth, Antony; Liu, Wen‐Chung; Lutzen, J.

doi:10.1109/led.2009.2015343

Cited by 1 publication

(2 citation statements)

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“…Although the carbon results in lower breakdown voltages compared to poly, there exists a large margin for the product conditions even with for the carbon-insulator-carbon (CIC) structures to guarantee the 10 years life time. The properties of different approaches of carbon as DRAM electrodes have been already published extensively [5,6] and have even led to the successful integration into the products based on 58-nm deep trench DRAM technology at Qimonda.…”

Section: Dram and Mim Capacitorsmentioning

confidence: 99%

“…Many people at Infineon's Corporate Research Department and at Qimonda have contributed to the results presented here and I especially would like to acknowledge the contributions of Robert Seidel, Gernot Steinlesberger, Werner Pamler and Eugen Unger in the early phase and Andrew P. Graham, Maik Liebau, Georg S. Duesberg, Guenther Aichmayr, Tim Boescke and many more people (see ref. 5,6,9) from the Dresden Qimonda Fab in the later phase of the project as the process has been transferred into the production. I also would like to acknowledge the continuous support of Wolfgang Hoenlein throughout the many phases of this development.…”

Section: Acknowledgmentsmentioning

confidence: 99%

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Carbon-based Materials as Key-enabler for “More Than Moore”

Kreupl¹

2011

MRS Proc.

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Carbon-based materials like nanotubes and graphene are heavily investigated as future CMOS-like devices and in interconnect applications. While much of the interest has been devoted to the device aspects in competition to conventional CMOS transistors, the paper here will focus on some less known applications of carbon. Proposed and demonstrated are interconnect applications like highly conductive electrodes for capacitors, gate material or through-silicon vias (TSV), novel non-volatile memories, carbon-silicon Schottky diodes or superior sensors.

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Section: Dram and Mim Capacitorsmentioning

confidence: 99%

Section: Acknowledgmentsmentioning

confidence: 99%