Conductive layers in diamond formed by hydrogen ion implantation and annealing

Popov, V.; Safronov, L. N.; Naumova, O. V.; Nikolaev, D. V.; Kupriyanov, Igor N.; Palyanov, Yuri N.

doi:10.1016/j.nimb.2011.08.050

Cited by 23 publications

(5 citation statements)

References 27 publications

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“…Several fabrication schemes can be implemented by exploiting light ions in the 10 2 -10 3 keV energy range, whose strongly non-uniform damage depth profile allows the creation of heavily damaged buried layers which graphitize after thermal annealing, whilst the structure of the surrounding material is largely restored [15][16][17]. Thus, spatially well-defined structures can be created by selectively etching the graphitized regions [18] or graphitic conductive paths can be fabricated for specific applications [19,20].…”

Section: Introductionmentioning

confidence: 99%

Direct measurement and modelling of internal strains in ion-implanted diamond

Bosia

Argiolas

Bazzan

et al. 2013

J. Phys.: Condens. Matter

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We present a phenomenological model and Finite Element simulations to describe the depth variation of mass density and strain of ion-implanted single-crystal diamond.Several experiments are employed to validate the approach: firstly, samples implanted with 180 keV B ions at relatively low fluences are characterized using high-resolution Xray diffraction (HR-XRD); secondly, the mass density variation of a sample implanted with 500 keV He ions well above its amorphization threshold is characterized with Electron Energy Loss Spectroscopy (EELS). At high damage densities, the experimental depth profiles of strain and density display a saturation effect with increasing damage and

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Section: Introductionmentioning

confidence: 99%

Direct measurement and modelling of internal strains in ion-implanted diamond

Bosia

Argiolas

Bazzan

et al. 2013

J. Phys.: Condens. Matter

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“…Particularly, the stimulation of non-classical electroluminescence (EL) required articulated device fabrication methods, relying either on the controlled homoepitaxial growth of suitably doped layers 13 or on the co-implantation of P and B dopants 14 . The exploitation of scanning focused MeV ion micro-beams to directly define graphitic structures embedded in insulating diamond through the local introduction of radiation-induced structural damage 17 18 offers an alternative strategy to simplify the fabrication process of charge-injecting electrodes in the bulk of the material. In particular, an ion fabrication technique relying on the strongly non-uniform damage profile of MeV ions to selectively graphitize buried layers in single-crystal diamond allowed the fabrication of particle detectors 19 , cellular biosensors 20 , surface acoustic waves generators 21 and IR emitters 22 .…”

mentioning

confidence: 99%

Electrical stimulation of non-classical photon emission from diamond color centers by means of sub-superficial graphitic electrodes

Forneris

Traina

Monticone

et al. 2015

Sci Rep

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Focused MeV ion beams with micrometric resolution are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk, as already demonstrated for different device applications. In this work we apply this fabrication method to the electrical excitation of color centers in diamond, demonstrating the potential of electrical stimulation in diamond-based single-photon sources. Differently from optically-stimulated light emission from color centers in diamond, electroluminescence (EL) requires a high current flowing in the diamond subgap states between the electrodes. With this purpose, buried graphitic electrode pairs, 10 μm spaced, were fabricated in the bulk of a single-crystal diamond sample using a 6 MeV C microbeam. The electrical characterization of the structure showed a significant current injection above an effective voltage threshold of 150 V, which enabled the stimulation of a stable EL emission. The EL imaging allowed to identify the electroluminescent regions and the residual vacancy distribution associated with the fabrication technique. Measurements evidenced isolated electroluminescent spots where non-classical light emission in the 560–700 nm spectral range was observed. The spectral and auto-correlation features of the EL emission were investigated to qualify the non-classical properties of the color centers.

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“…At high irradiation fluences, a disordered irradiated diamond layer undergoes an irreversible transition to graphite-like structures under annealing. The processes of the graphitization of thin layers in diamond under ion irradiation are of interest for the creation of conductors on the surface of diamond and various diamond-graphite heterostructures [26][27][28].…”

Section: Conductivity Of the Ion-modified Layermentioning

confidence: 99%

The Potential of High-Fluence Ion Irradiation for Processing and Recovery of Diamond Tools

et al. 2020

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The graphitization and surface growth of synthetic diamonds by high-fluence irradiation with 30 keV argon and carbon ions have been experimentally studied. scanning electron microscope (SEM) and atomic force microscope (AFM) show removal of traces of mechanical polishing. The ion-induced roughness does not exceed 20 nm. Raman spectroscopy and the measurement of electrical conductivity confirm the graphitization of the surface layer when irradiated with argon ions at the temperature of 230 °C and the diamond structure of the synthesized layer when irradiated with carbon ions at the temperature of 650 °C.

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Conductive layers in diamond formed by hydrogen ion implantation and annealing

Cited by 23 publications

References 27 publications

Direct measurement and modelling of internal strains in ion-implanted diamond

Direct measurement and modelling of internal strains in ion-implanted diamond

Electrical stimulation of non-classical photon emission from diamond color centers by means of sub-superficial graphitic electrodes

The Potential of High-Fluence Ion Irradiation for Processing and Recovery of Diamond Tools

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