Conductivity and anomalous polarization in ceramicferroelectrics with perovskite structure

Prokopalo, O. I.

doi:10.1080/00150197608236700

Cited by 47 publications

(20 citation statements)

References 2 publications

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“…Though barium stannate is an important material in undoped form but its properties can be modified by substituting different ions at Ba or Sn sites. It is reported that on substitution of La at Ba site of barium stannate, electrical behaviour of barium stannate changes from insulator to conductor [15][16][17]. Superconducting behaviour of sample Ba(Sn 0.7 Sb 0.30 )O 3 have been investigated [18].…”

Section: Introductionmentioning

confidence: 98%

Synthesis, structure and electrical behaviour of nickel-doped barium stannate

Upadhyay

Parkash

Kumar

2007

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 98%

Synthesis, structure and electrical behaviour of nickel-doped barium stannate

Upadhyay

Parkash

Kumar

2007

Journal of Alloys and Compounds

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“…Because of these characteristic properties, BaSnO 3 based ceramics are becoming more and more important in material technology. It can be used to prepare thermally stable capacitors and to fabricate ceramic boundary layer capacitors [1][2][3][4][5][6][7][8]. Moreover, barium stannate can be also used as a functional material for semiconductor gas sensors [9][10][11][12][13][14][15] and photocatalytic applications [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Semiconducting properties of Ge-doped BaSnO3 ceramic

Köferstein

Yakuphanoğlu

2010

Journal of Alloys and Compounds

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a b s t r a c tThe electrical and optical properties of Ge-doped BaSnO 3 ceramics sintered at various temperatures have been investigated to determine their semiconductor behavior. The electrical conductivity of Gedoped BaSnO 3 samples increases with increase in temperature, confirming that the samples exhibit a semiconductor behavior. A maximum conductivity value of 6.31 × 10 −9 S/cm was observed for the sample sintered at 1200 • C. The optical band gaps of the Ge-doped BaSnO 3 samples were determined by means of reflectance spectra. The variation of optical band gap with temperature was analyzed using E g (T) = E go +ˇT relation. The rate of change of the band gapˇof BaSn 0.99 Ge 0.01 O 3 was found to be 7.6 × 10 −4 (eV/ • C). A minimum optical band gap value of 2.95 eV was observed for the sample sintered at 1400 • C. It is evaluated that BaSn 0.99 Ge 0.01 O 3 is a wide band gap semiconductor and its semiconducting properties change with sintering temperature.

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“…Literature survey reveals that they are employed in various technical applications such as humidity sensors [1], stable capacitors [2], luminescence [3] and opto-electronic devices [4]. Increasing the size of the alkaline earth ion A 2+ and the ability of the octahedral B 4+ ion to lower its oxidation state raises the mobility of oxygen ions and catalyses the reduction process.…”

Section: Introductionmentioning

confidence: 99%