Conductivity and tunneling density of states in granular Cr films

Sun, Yu; Yeh, Sheng-Shiuan; Lin, Juhn‐Jong

doi:10.1103/physrevb.82.054203

Cited by 24 publications

(21 citation statements)

References 30 publications

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“…The δσ ∝ ln T temperature law has been confirmed. In addition, a large suppression in the electronic density of states around the Fermi energy N(E F ) has been found in studies of the differential conductances of Al/AlO x /Cr tunnel junctions [179], and thin PdZrO 2 granular films [187]. This last experimental result also qualitatively confirmed the prediction of the theory of granular metals [52,188].…”

Section: Longitudinal Electrical Conductivitysupporting

confidence: 76%

“…Soon after the theoretical prediction of equation (9), the electrical-transport properties of several granular systems were studied, including Pt/C composite nanowires [184,185], B-doped nano-crystalline diamond films [186], and granular Cr films [179]. The δσ ∝ ln T temperature law has been confirmed.…”

Section: Longitudinal Electrical Conductivitymentioning

confidence: 94%

“…When Here g c T = (1/2πd) ln(E c /δ) is a critical dimensionless tunneling conductance whose value depends on the dimensionality of the granular arraỹ d, where E c is the charging energy, andδ is the mean energy level spacing in a grain (references [52,55]). In experiments, the magnitude of g c T is of order unity or somewhat smaller [109,179].…”

Section: Universal Conductance Fluctuationsmentioning

confidence: 98%

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Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Lin

2014

J. Phys.: Condens. Matter

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Abstract.Indium tin oxide (Sn-doped In 2 O 3−δ or ITO) is an interesting and technologically important transparent conducting oxide. This class of material has been extensively investigated for decades, with research efforts focusing on the application aspects. The fundamental issues of the electronic conduction properties of ITO from 300 K down to low temperatures have rarely been addressed. Studies of the electricaltransport properties over a wide range of temperature are essential to unraveling the underlying electronic dynamics and microscopic electronic parameters. In this Topical Review, we show that one can learn rich physics in ITO material, including the semiclassical Boltzmann transport, the quantum-interference electron transport, and the electron-electron interaction effects in the presence of disorder and granularity. To reveal the avenues and opportunities that the ITO material provides for fundamental research, we demonstrate a variety of charge transport properties in different forms of ITO structures, including homogeneous polycrystalline films, homogeneous singlecrystalline nanowires, and inhomogeneous ultrathin films. We not only address new physics phenomena that arise in ITO but also illustrate the versatility of the stable ITO material forms for potential applications. We emphasize that, microscopically, the rich electronic conduction properties of ITO originate from the inherited freeelectron-like energy bandstructure and low-carrier concentration (as compared with that in typical metals) characteristics of this class of material. Furthermore, a low carrier concentration leads to slow electron-phonon relaxation, which causes (i) a small residual resistance ratio, (ii) a linear electron diffusion thermoelectric power in a wide temperature range 1-300 K, and (iii) a weak electron dephasing rate. We focus our discussion on the metallic-like ITO material.

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Section: Longitudinal Electrical Conductivitysupporting

confidence: 76%

Section: Longitudinal Electrical Conductivitymentioning

confidence: 94%

Section: Universal Conductance Fluctuationsmentioning

confidence: 98%

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Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Lin

2014

J. Phys.: Condens. Matter

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“…The electronic transport properties of granular metals are governed by the (inelastic) tunneling between metallic grains through the potential associated with the dielectric matrix. In accordance with the strength of the intergrain tunneling granular metals show either non-insulating or insulating behavior [4,5]. For mid intergrain coupling, due to the ability of fine tuning, granular metals are considered to be ideal model systems to study the metal-insulator transition (MIT) [3,6,7].…”

Section: Introductionmentioning

confidence: 99%

Tuning the electrical conductivity of Pt-containing granular metals by postgrowth electron irradiation

Porrati

Sachser

Schwalb

et al. 2011

Journal of Applied Physics

103

171

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We have fabricated Pt-containing granular metals by focused electron beam induced deposition from the (CH3)3CH3C5H4Pt precursor gas. The granular metals are made of platinum nanocrystallites embedded in a carbonaceous matrix. We have exposed the asgrown nanocomposites to low energy electron beam irradiation and we have measured the Finally, by means of AFM measurements we observe a reduction of the volume of the samples with increasing irradiation time which we attribute to the removal of carbon molecules.

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“…Soon after the theoretical finding of the ln T corrections, the conductivities of several granular systems were measured, including Pt/C composite nanowires [16,17], B-doped nanocrystalline diamond films [18], and granular Cr films [19]. The σ ∝ ln T law was confirmed.…”

Section: Introductionmentioning

confidence: 92%

Electron-electron interaction effect on longitudinal and Hall transport in thin and thickAgx(SnO2)1−xgranular metals

Lin

2015

Phys. Rev. B

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We study the temperature behaviors of the Hall coefficient, R H , and longitudinal conductivity, σ , of two series of Ag x (SnO 2) 1−x (x being the Ag volume fraction) granular films lying in the metallic regime. The first (second) series of films are ∼500 (∼9) nm thick and constitute a three-(two-) dimensional granular array. In the high-x regime with g T g c T (g T being the dimensionless intergrain tunneling conductance, and g c T being the critical tunneling conductance at the percolation threshold), we observe a R H ∝ ln T law from ∼6 to 300 K. This ln T behavior is independent of array dimensionality. We also observe a σ ∝ ln T law in the temperature range ∼20-100 K. Below ∼10 K, the temperature behavior of σ changes to a √ T dependence in thick films, while it changes to a different ln T dependence in thin films. The overall R H and σ characteristics can be explained by the electron-electron interaction (EEI) effects in the presence of granularity. As x is reduced and approaches the percolation threshold, we found that the ln T dependences of R H and σ still hold for a wide temperature range. We propose an explanation for the long-standing puzzle of the σ ∝ ln T dependence, which has previously been frequently observed in composite systems near the quantum percolation threshold, as arising from the same EEI effect considered in the recent theory of granular metals.

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Conductivity and tunneling density of states in granular Cr films

Cited by 24 publications

References 30 publications

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Tuning the electrical conductivity of Pt-containing granular metals by postgrowth electron irradiation

Electron-electron interaction effect on longitudinal and Hall transport in thin and thickAgx(SnO2)1−xgranular metals

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