Conductivity Anisotropy in Epitaxial 6H and 4H Sic

Schaffer, W. J.; Negley, Gerry; Irvine, K. G.; Palmour, John W.

doi:10.1557/proc-339-595

Cited by 272 publications

(130 citation statements)

References 8 publications

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“…Equation (6) has been used extensively to model hole and electron mobility variations [17], [18]. Numerical implementation of (6) via table lookup array (required by MEDICI) is shown as square data points in the figure [13].…”

Section: Carrier Mobility Dependencesmentioning

confidence: 99%

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Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis

Rashid

Tajani

Twitchen

et al. 2008

IEEE Trans. Electron Devices

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Section: Carrier Mobility Dependencesmentioning

confidence: 99%

“…with doping in materials such as silicon and silicon carbide [16]- [18]. Fitting parameters for these materials are shown in Table II for boron and aluminum doping, respectively.…”

Section: Table II Concentration-dependent Mobility Model μP(n a ) Parmentioning

confidence: 99%

Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis

Rashid

Tajani

Twitchen

et al. 2008

IEEE Trans. Electron Devices

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“…23,24 Let us finally consider the relaxation of the photoinduced charge carriers. Figure 4 shows the pump-induced…”

mentioning

confidence: 99%

Terahertz conductivity and ultrafast dynamics of photoinduced charge carriers in intrinsic 3C and 6H silicon carbide

Rubano¹,

Wolf²,

Kampfrath³

2014

Applied Physics Letters

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The terahertz conductivity of photoinduced charge carriers in two common polytypes of silicon carbide, 3C-SiC and 6H-SiC, is studied on picosecond timescales using an optical-pump / THz-probe technique. We find that the conductivity, measured from 0.7 to 3 THz, is well described by the Drude model, and obtain a velocity relaxation time of 75 fs, independent of sample and charge-carrier density. In contrast, the carrier relaxation rates in the two polytypes differ by orders of magnitude: in 6H-and 3C-SiC, recombination proceeds on a time scale of few picoseconds and beyond nanoseconds, respectively.The technological demand for high-power, hightemperature, and high-field electronic devices requires robust base materials. 1 In this respect, silicon carbide (SiC) is one of the most promising candidates owing to its excellent electrical and structural properties. SiC exists in a large number of polytypes that can be all thought of resulting from stacking three types of bilayer structures (A, B and C) in a certain periodic sequence. The most commonly encountered polytypes are 3C-SiC (stacking order ABC) and 6H-SiC (ABCACB), resulting in a zincblende (two atoms per unit cell) and hexagonal structure (twelve atoms per unit cell), respectively. 2 At room temperature, 3C-and 6H-SiC have an an indirect electronic energy gap of 2.36 eV and 3.0 eV, respectively. 2SiC exhibits exceptional properties that are to a large extent related to the Si-C bond, leading to a stronger localization of the charge density and a larger band gap compared to Si. 2,3 For example, the thermal conductivity of 4.9 and 5.0 W/cm K and breakdown electric field of 3.2 and 1.5 MV/cm for 6H-SiC and 3C-SiC, respectively, 4,5 are about 3 to 5 times larger than those of Si. 2 In addition, the various polytypes make SiC an interesting host material for controlling single electron spins. 6 Also, 6H-SiC may serve as suitable starting material for large-scale graphene production. 7 In order to improve the quality and performance of SiC-based devices, knowledge of fundamental parameters such as the mobility of charge carriers is crucial. Moreover, charge transport is also of considerable interest from the perspective of fundamental physics. So far, the carrier mobility has not been measured in the case of intrinsic samples since they are wide band-gap insulators. A possible approach is to create a transient free-carrier population, for instance by exciting the material with a light pulse. The optical generation of charge carriers circumvents complications arising from chemical doping and, in addition, provides the opportunity to measure out-of-equilibrium parameters. a) Electronic mail: rubano@fisica.unina.it So far, the dynamics of photoinduced charge carriers in intrinsic 3C-and 6H-SiC has been studied using pumpprobe experiments 8-10 , however, with a time resolution of nanoseconds and at optical probe frequencies, far above the charge-carrier scattering rates that usually lye in the terahertz (THz) frequency range. 12 Deeper insight could be obtained by per...

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“…In a previous study, we fabricated GaN vertical conducting diodes on n-type 6H-SiC substrates using conductive AlGaN buffer layers, and a high breakdown voltage (305 V) with a low on-resistance (1.51 mΩ cm 2 ) was obtained [3]. As a conductive substrate, 4H-SiC has more potential for high-power operation than 6H-SiC because the electron mobility of 4H-SiC in the (0001) direction is ten times higher than that of 6H-SiC [4,5], yielding a low on-resistance of the vertical conducting device on 4H-SiC substrate. The drawback of 4H-SiC substrate for heteroepitaxial growth of GaN is that the band offset between the AlGaN buffer layer and 4H-SiC is larger than that between it and 6H-SiC [6], which might increase the series resistance of devices.…”

mentioning

confidence: 99%

Low on‐resistance of GaN p‐i‐n vertical conducting diodes grown on 4H‐SiC substrates

Nishikawa

Kumakura

Makimōto

2007

Phys. Status Solidi (c)

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We investigated the resistance of conductive AlGaN buffer layers and the current-voltage characteristics of GaN p-i-n vertical conducting diodes on n-type 4H-SiC substrates grown by low-pressure metalorganic vapor-phase epitaxy. High Si doping of the AlGaN buffer layer at the AlGaN/SiC interface produces ohmic current-voltage characteristics in spite of the large band offset between AlGaN and 4H-SiC. Owing to the optimization of the AlGaN buffer layer, a low on-resistance (R on ) of 1.12 mΩ cm 2 with high breakdown voltage (V B ) of 300 V is obtained for a GaN p-i-n vertical conducting diode on a 4H-SiC substrate, leading to the figure of merit (V B 2 /R on ) of 80 MW/cm 2 , which is larger than that for the diode with the same structure on a 6H-SiC substrate (62 MW/cm 2 ). This result indicates that 4H-SiC is preferable for fabricating GaN-based electronic devices with a low on-resistance and high breakdown voltage.

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Conductivity Anisotropy in Epitaxial 6H and 4H Sic

Cited by 272 publications

References 8 publications

Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis

Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis

Terahertz conductivity and ultrafast dynamics of photoinduced charge carriers in intrinsic 3C and 6H silicon carbide

Low on‐resistance of GaN p‐i‐n vertical conducting diodes grown on 4H‐SiC substrates

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