Conductivity in polycrystalline silicon—physics and rigorous numerical treatment

Peisl, M.; Wieder, A.W.

doi:10.1109/t-ed.1983.21447

Cited by 18 publications

(3 citation statements)

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“…With @jo and the measured values of peff the teniperature coefficient a can be determined to 5.1 x 10-4K-1 in agreement with values obtained in [19] from measurements on polycrystalline CdS. Under the assumption that for GaP and InP similar values of oc are valid, an upper limiting value of @jo, for which Hall measurements on polycrystalline material at room temperature just are possible, can be estimated by (2). If we take peff = pmin = 2 cm2/Vs (as valid in our case) we obtain for materials with a mean grain size between 0.2 and 1 mm values of Qo between 0.44 and 0.49 eV for materials with low effective mass (n-GaAs, n-InP) and values between 0.41 and 0.44 eV for material with higher effective mass (= 0.4m0, n-and p-Gap, p-GaAs).…”

Section: Discussionsupporting

confidence: 83%

“…The current across a grain boundary is in a wide temperature region thermally activated. This behaviour has been interpreted by the thermionic-emission model [l] or by diffusion and drift mechanisms [2]. In polycrystalline materials the action of grain boundaries can be described by an effective mobility perf limited by potential barriers and given in the thermally activated region by [3] pen-eXP( -3).…”

Section: Introductionmentioning

confidence: 99%

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On the determination of the carrier concentration in large-grain polycrystalline InP, GaAs, and GaP by Hall effect measurements

Siegel

Kühnel

Schneider

1985

phys. stat. sol. (a)

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Hall and conductivity measurements are performed in a wide temperature region on large‐grain polycrystalline samples of n‐InP, n‐ and p‐GaAs as well as n‐ and p‐GaP. The feasibility of Hall measurements at a given temperature depends mainly on the height ΦB of the grain boundary potential barriers and on the average grain size. Measurements at room temperature are possible on large‐grain material (average grain size 0.2 to 1 mm) for ΦB ≦ 0.4 eV. For greater barrier heights elevated temperatures are necessary. If the Hall coefficient is measurable than it yields an effective carrier concentration for the polycrystalline sample which agrees well with the carrier concentration in the bulk of the grains.

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Section: Discussionsupporting

confidence: 83%

Section: Introductionmentioning

confidence: 99%

On the determination of the carrier concentration in large-grain polycrystalline InP, GaAs, and GaP by Hall effect measurements

Siegel

Kühnel

Schneider

1985

phys. stat. sol. (a)

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“…Electron transport in polysilicon has been studied since the 70s, as this material found applications in resistors, interconnections, and silicon-gate MOSFETs. From the viewpoint of current conduction, we can identify two modeling approaches, that differ in the way GBs are treated: one approach is to extend the drift-diffusion model usually adopted in monocrystalline silicon, describing GBs as trapping centers with a reduced mobility [ 80 , 81 , 82 ]; the other is based on a thermionic emission model at the GBs [ 83 , 84 , 85 , 86 , 87 ]. Although the latter seems to be gaining traction in recent literature, a definitive conclusion has not been reached, yet, and a recent study of the different dependences implied by such models can be found in [ 88 , 89 ].…”

Section: Polysilicon Conductionmentioning

confidence: 99%

Random Telegraph Noise in 3D NAND Flash Memories

et al. 2021

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In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the polycrystalline nature of the string silicon channels on current transport. Starting from that, experimental data for RTN in 3D arrays are presented and explained via theoretical and simulation models. The attention is drawn, in particular, to the changes in the RTN dependences on the array working conditions that resulted from the transition from planar to 3D architectures. Such changes are explained by considering the impact of highly-defective grain boundaries on percolative current transport in cell channels in combination with the localized nature of the RTN traps.

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Electrical Properties of Large‐grain Polycrystalline GaP

Siegel

Kühnel

1986

Cryst. Res. Technol.

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grown by the SSD method or synthesized in a high-pressure autoclave. There exists a clear correlation between these characteristics and those of corresponding bicrystals from which it can bc concluded on a strongly unequal division of the applied voltage on both depletion regions of the grain boundaries. On the other hand I-U characteristics of polysilicon inostly are described by a sinh-behaviour which supposes an equal division of the voltage.These differences are discussed. The I-U characteristics of the polycrystalline GaP a t room temperature are governed by thermionic emission and thermionic field emission whereas a t low temperatures (and high voltages) tunneling dominates. At high temperatures the influence of grain boundaries disappears.An grobkristallinein p-Gap, das iiiittels des SSD-Verfahreiis bzw. durch Drucksyntliese hergestellt wurde, erfolgten I-Uund I-T-Messungen. Es existiert eine eindeutige Korrelatioii zwischon diesen Kennlinien und deiien entsprechender Bikristalle, woraus auf eine stark ungleiche Verteilung der angelegten Spannung auf beide Rauriiladungsschichten der Korngrenzen geschlossen werden kann. Dagegen werden I-U-Kennlinien von p l ykristallinem Siliziuin ineist durch ein sinh-Verhalten bcschrieben, das eine Gleichverteilung der Spannung auf beide Reuiiiladungss~hichten voraussetzt. Diese Unterschiede werden diskiitiert. Die I-U-Kennlinien des polykristallinen p -G a P sind bei Rauniteniperatur clurch theririische Eiiiission und therniische Peldeniission bestininit, wlhrend bei tiefen Tettiperaturen (und hoheit Span~iungen) reiiies Tunncln dominiert. Bei hohen Tcniperatureii verschwindet der EinflulJ der Korngrenzen. IritroductioiiNlectrical properties of polycrystalliiie silicoti with small grain size are reported iii numerous papers. The I-U curves are approximated by hyperbolic-sine curves which have been interpreted mostly on the base of the inodel of therinioiiic emission over a double Schottky barrier at the grain boundaries assumiiig that the voltage i R equally divided 0 1 1 both sides of cacti barrier (TARNG; Lu et al. 1!)81). Recently niodels have beeii published which take in consideratioil also other insohanistiis such as thermiotiic field emission, diffusion and drift inechatiisrns (YEISL, WIEDEE; I n et al. 1!)83). 0 1 1 the other hand ill the last few years an iiicreasiiig number of papers has been published coiicerniiig the conduptioti mechanisms iii bicrystals (across a single graiti boundary). PIKE and SPAGNE (1'379) deduced by means of the thermionio emission inodel for the current across a grain-boundary the relation p7B is the barrier height (band bending) at the grain boundary and the difference between the Fermi energy and the conduction band outside the depletion region

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Conductivity in polycrystalline silicon—physics and rigorous numerical treatment

Cited by 18 publications

References 0 publications

On the determination of the carrier concentration in large-grain polycrystalline InP, GaAs, and GaP by Hall effect measurements

On the determination of the carrier concentration in large-grain polycrystalline InP, GaAs, and GaP by Hall effect measurements

Random Telegraph Noise in 3D NAND Flash Memories

Electrical Properties of Large‐grain Polycrystalline GaP

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