Conductivity of thin antimony films at low temperatures

Hermann, B. A.; Didschuns, I.; Haier, P.; Kopp, Marco; Esser, N.; Resch‐Esser, U.; Richter, Wolfgang; Lüders, Klaus

doi:10.1016/0040-6090(95)07068-0

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2009

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“…As a metal, Sb could stay in the crystal boundaries and together with other defects and impurities lead to a very high carrier concentration of the FeSb 2 films. The resistivity of Sb films was reported to increase with increasing temperature between 10 and 250 K, 26 whereas the resistivity of the FeSb 2 film in this work decreases with increasing temperature ͓Fig. 3͑b͔͒.…”

Section: Resultsmentioning

confidence: 54%

Thermoelectric transport properties of highly oriented FeSb2 thin films

Sun

Johnsen

Eklund

et al. 2009

Journal of Applied Physics

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Highly textured FeSb 2 films were produced on quartz wafers by a sputtering method. Their resistivity and Seebeck coefficient ͑S͒ were measured and a maximum absolute value of S ϳ 160 V K −1 at 50 K was obtained. Hall measurements were employed to study the charge carrier concentrations and Hall mobilities of the FeSb 2 films. By comparing with the transport properties of FeSb 2 single crystals and an extrinsically doped FeSb 1.98 Te 0.02 single crystal, the thermoelectric properties of the FeSb 2 films are demonstrated to be dominated by the intrinsic properties of FeSb 2 at a high charge carrier concentration.

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Section: Resultsmentioning

confidence: 54%