sensors, re-writable memory devices, radio frequency identifi cation tags, etc. [ 1,2 ] Performance of OTFTs has been significantly improved in the last decade through engineering of the materials, interfaces, and architecture of devices. [3][4][5] Reported maximum charge carrier mobilities reached 17.2 cm 2 V −1 s −1 for vacuum-deposited asymmetric tridecyl (C 13 )-substituted [1]benzothieno [3,2-b][1]benzothiophene (C 13 -BTBT), [ 6 ] 31.3 cm 2 V −1 s −1 [ 7 ] and 43 cm 2 V −1 s −1 [ 8 ] for solution-processed OTFTs based on symmetric C 8 -BTBT, and 10.5 cm 2 V −1 s −1 for solution-processed conductive polymers. [ 9 ] Compared to the FETs made from the amorphous silicon (α-Si) that have a mobility of ≈1 cm 2 V −1 s −1 , these results are very promising for the massive commercialization of OTFTs. Moreover, an understanding of device physics has been achieved through simultaneous experimental and modeling analysis. [ 10 ] Finding new and specifi c functionalities and thus widening the applications of OTFTs is in the main research focus. One of the specifi c functionalities is optical control over OTFT electrical characteristics to attain air-stable photocontrolled transistors, i.e., organic thin-fi lm phototransistors (OTF-PT), with sensing and/ or memory properties. [ 14,15 ] OTF-PTs are four-terminal devices, namely, gate-source-drain-light electrodes where adjustment of the incident light intensity amplifi es the drain current. As a result, OTF-PTs have higher signal-to-noise ratio (higher sensitivity-lower noise), compared to photodiodes [ 14 ] and they are also suitable for application in optical transducers. [ 16 ] OTF-PTs have an advantage over their inorganic counterparts due to the ability to choose from a variety of organic materials to tune the sensing properties within the ultraviolet (UV) and visible light spectrum. However, response times are slower compared with inorganic UV sensors recently reported. [ 17 ] Therefore, the current challenge in the fabrication of OTF-PT with high photocurrent gain is to design and engineer organic sensors and memory devices with properties comparable to common inorganic devices. Important parameters for the fabrication of high quality OTF-PT are operational stability (electrical and photo-), photosensitivity, and retention times (long for memory and short for sensors).So far, photocontrol of OTFTs electrical properties has been achieved through the incorporation of photochromic organic